Analytical Description of Inversion-Layer Quantum Effects Using the Density Gradient Model and Singular Perturbation Theory
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概要
- 論文の詳細を見る
Analytical formulae for electrostatic potential and electron density profiles in the n-type planar metal oxide semiconductor field-effect-transistor inversion layer are presented. Equations based on the density gradient model are analytically solved using singular perturbation theory. The formulae give good agreement with exact numerical solutions over a broad range of voltages and device structures.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-12-15
著者
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Cumberbatch Ellis
School Of Mathematical Sciences Claremont Graduate University
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Abebe Henok
Mosis Service Information Sciences Institute University Of Southern California
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Cumberbatch Ellis
School of Mathematical Sciences, Claremont Graduate University, Claremont, CA 91711, U.S.A.
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Uno Shigeyasu
Department of Electrical and Computer Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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- Analytical Description of Inversion-Layer Quantum Effects Using the Density Gradient Model and Singular Perturbation Theory