Analytic Circuit Model of Ballistic Nanowire Metal-Oxide-Semiconductor Field-Effect Transistor for Transient Analysis (Special Issue : Solid State Devices and Materials)

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文

著者

• Mori Nobuya

  Department Of Electronic Engineering Faculty Of Engineering Osaka University

• Uno Shigeyasu

  Department of Electrical and Computer Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

• Numata Tatsuhiro

  Department of Electrical and Computer Science, Graduate School of Engineering, Nagoya University, Furocho, Chikusa-ku, Nagoya 464-8603, Japan

• Nakazato Kazuo

  Department of Electrical and Computer Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

• Kamakura Yoshinari

  Department of Electronic Engineering, Osaka University, Suita, Osaka 565-0871, Japan

• Uno Shigeyasu

  Department of Photonics, College of Science and Engineering, Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan

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• Effect of Oxide Breakdown on Complementary Metal Oxide Semiconductor Circuit Operation and Reliability
• A Study of Pre-Breakdown in Ultra-Thin Silicon Dioxide Films Using Carrier Separation Measurement
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• Effects of Strained Layers on Zener Tunneling in Silicon Nanostructures
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