Effects of Strained Layers on Zener Tunneling in Silicon Nanostructures
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概要
- 論文の詳細を見る
An atomistic transport simulation based on the nonequilibrium Green's function and empirical tight-binding methods has been performed for one-dimensional Si $n$–$i$–$n$ devices having a thin strained layer in the central $i$-region. Simulation results show that introducing a strain layer strongly enhances the Zener tunneling current for both tensile and compressive strain.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-04-30
著者
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Mori Nobuya
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Minari Hideki
Department Of Electronic Engineering Osaka University
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Minari Hideki
Department of Electronic Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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