Analytic Circuit Model of Ballistic Nanowire Metal--Oxide--Semiconductor Field-Effect Transistor for Transient Analysis
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概要
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A fully analytic and explicit model of device properties in the ballistic transport in gate-all-around metal--oxide--semiconductor field-effect transistors (MOSFETs) is proposed, which enables circuit simulations. The electrostatic potential distribution in the wire cross section is approximated by a parabolic function. Using the applied potential, the energy levels of electrons are analytically obtained in terms of a single unknown parameter by perturbation theory. Ballistic current is obtained in terms of an unknown parameter using the analytic expression of the electron energy level and the current equation for ballistic transport. We analytically derive the parameter with a one-of-a-kind approximate methodology. With the obtained parameter, the fully analytic and explicit model of device properties such as energy levels, ballistic current, and effective capacitance is derived with satisfactory accuracy compared with the numerical simulation results. Finally, we perform a transient simulation using a circuit simulator, introducing our model to it as a Verilog-A script.
- 2013-04-25
著者
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Mori Nobuya
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Uno Shigeyasu
Department of Electrical and Computer Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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Numata Tatsuhiro
Department of Electrical and Computer Science, Graduate School of Engineering, Nagoya University, Furocho, Chikusa-ku, Nagoya 464-8603, Japan
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Nakazato Kazuo
Department of Electrical and Computer Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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Kamakura Yoshinari
Department of Electronic Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Mori Nobuya
Department of Electronic Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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