Phonon Limited Electron Transport In SOI and Double-Gate MOSFETs Incorporating Realistic Acoustic Phonon Waves
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概要
- 論文の詳細を見る
- 2005-09-13
著者
-
Mori Nobuya
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Uno Shigeyasu
School Of Mathematical Sciences Claremont Graduate University
関連論文
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- Simulation Study of the Dependence of Submicron Polysilicon Thin-Film Transistor Output Characteristics on Grain Boundary Position
- Significant Reduction of Phonon Scattering Potential in 1D Si Quantum Dot Array Interconnected with Thin Oxide Layers
- Phonon Limited Electron Transport In SOI and Double-Gate MOSFETs Incorporating Realistic Acoustic Phonon Waves
- Magnetophonon Resonance at High Electric and Magnetic Fields in Small n^+nn^+ GaAs Structures
- Effects of Electron-Phonon Interaction on Transport Characteristics of Sub-10-nm Bulk-MOSFETs
- Effects of Strained Layers on Zener Tunneling in Silicon Nanostructures
- Impact of strain on ballistic current in Si n-i-n structures
- Simulation Study of the Dependence of Submicron Polysilicon Thin-Film Transistor Output Characteristics on Grain Boundary Position
- Mode-Coupling Effects in Non-Equilibrium Green’s Function Device Simulation
- Reduction of Electron Decay Time Using Disordered Tunnel Barrier
- Electron–Modulated-Acoustic-Phonon Interactions in a Coated Silicon Nanowire
- Effects of Strained Layers on Zener Tunneling in Silicon Nanostructures
- Impact of Strain on Ballistic Current in Si n–i–n Structures
- Analytical Description of Intravalley Acoustic Phonon Limited Electron Mobility in Ultrathin Si Plate Incorporating Phonon Modulation due to Plate Interfaces
- Analytic Circuit Model of Ballistic Nanowire Metal--Oxide--Semiconductor Field-Effect Transistor for Transient Analysis
- Analytic Circuit Model of Ballistic Nanowire Metal-Oxide-Semiconductor Field-Effect Transistor for Transient Analysis (Special Issue : Solid State Devices and Materials)