Simulation Study of the Dependence of Submicron Polysilicon Thin-Film Transistor Output Characteristics on Grain Boundary Position

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-12-30

著者

• Uno Shigeyasu

  School Of Mathematical Sciences Claremont Graduate University

• WALKER Philip

  Microelectronics Research Centre, Cavendish Laboratory, Cambridge University

• MIZUTA Hiroshi

  Tokyo Institute of Technology

関連論文

• Analytical Solutions to Quantum Drift-Diffusion Equations for Quantum Mechanical Modeling of MOS Structures
• Simulation Study of the Dependence of Submicron Polysilicon Thin-Film Transistor Output Characteristics on Grain Boundary Position
• Phonon Limited Electron Transport In SOI and Double-Gate MOSFETs Incorporating Realistic Acoustic Phonon Waves
• Simulation Study of the Dependence of Submicron Polysilicon Thin-Film Transistor Output Characteristics on Grain Boundary Position

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