Simulation Study of the Dependence of Submicron Polysilicon Thin-Film Transistor Output Characteristics on Grain Boundary Position

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概要

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• We investigate the impact of varying the grain boundary (GB) position on the output ($I_{\text{d}}$–$V_{\text{d}}$) characteristics of submicron single GB polysilicon thin film transistors (TFTs), by two-dimensional (2D), drift-diffusion based, device simulation. We employ a localized GB trapping model with a distribution of both donor-like and acceptor-like trap states over the forbidden energy gap of the GB region. We show that for devices with channel lengths in the deep submicron regime, significant variations in output conductance ($g_{\text{d}}$) occur as the GB position is varied. Specifically, we find that output conductance increases as the GB approaches the drain edge. Furthermore, the sensitivity of output conductance to the GB position increases as channel length decreases. The findings have important implications for any future analogue three-dimensional (3D) IC design that uses polysilicon as a device material.

• 2005-12-15

著者

• Uno Shigeyasu

  School Of Mathematical Sciences Claremont Graduate University

• WALKER Philip

  Microelectronics Research Centre, Cavendish Laboratory, Cambridge University

• MIZUTA Hiroshi

  Tokyo Institute of Technology

• Mizuta Hiroshi

  Tokyo Institute of Technology, 2-12-1 O-Okayama, Meguro-ku, Tokyo 152-8552, Japan

• Walker Philip

  Microelectronics Research Centre, Cavendish Laboratory, Cambridge University, Cambridge, CB3 0HE, U.K.

• Uno Shigeyasu

  School of Mathematical Sciences, Claremont Graduate University, 710 N College Avenue, Claremont, CA 91711, U.S.A.

関連論文

• Analytical Solutions to Quantum Drift-Diffusion Equations for Quantum Mechanical Modeling of MOS Structures
• Simulation Study of the Dependence of Submicron Polysilicon Thin-Film Transistor Output Characteristics on Grain Boundary Position
• Phonon Limited Electron Transport In SOI and Double-Gate MOSFETs Incorporating Realistic Acoustic Phonon Waves
• Simulation Study of the Dependence of Submicron Polysilicon Thin-Film Transistor Output Characteristics on Grain Boundary Position

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