Impact of Strain on Ballistic Current in Si n–i–n Structures
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概要
- 論文の詳細を見る
Atomistic transport simulation based on the nonequilibrium Green's function and empirical tight-binding methods has been performed for one-dimensional strained Si n–i–n devices. Simulation results show that the tensile strain enhances the ballistic current and reduces the Zener tunneling current, while the compressive strain gives opposite results.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-04-25
著者
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Mori Nobuya
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Minari Hideki
Department Of Electronic Engineering Osaka University
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