On-chip Microelectrode Capacitance Measurement for Biosensing Applications
スポンサーリンク
概要
- 論文の詳細を見る
Charge-based capacitance measurement (CBCM) is used to implement an on-chip microelectrode biosensor combined with complementary metal oxide semiconductor (CMOS) circuitry. Electrical double-layer capacitance is exploited to measure the interfacial property changes during biorecognition events at electrode surfaces. A test chip with $4 \times 4$ μm2 planar electrodes and a differential capacitance-to-voltage conversion circuit was designed and fabricated using 1.2 μm CMOS technology. The chip was experimentally characterized in sodium chloride (NaCl) aqueous solutions to demonstrate its feasibility to detect capacitance variation when the ionic concentration is varied between 0.1 mM and 1 M over a wide frequency range. To show the feasibility of the microfabricated electrode for detecting biomaterials in such a small sensor area, the hybridization of 20-mer probe oligonucleotides in a phosphate-buffered solution was demonstrated. A 20% change in capacitance (10 fF) before and after the injection of complimentary target oligonucleotides is successfully observed, showing promise for future miniature yet high-throughput biosensor arrays.
- 2010-01-25
著者
-
Ozawa Hiroaki
Department Of Applied Chemistry Graduate School Of Engineering Kyushu University
-
Ozawa Hiroaki
Department of Electrical and Computer Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
-
Uno Shigeyasu
Department of Electrical and Computer Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
-
Uno Shigeyasu
Department of Electrical and Computer Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
-
Nakazato Kazuo
Department of Electrical and Computer Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
-
Yusof Yusmeeraz
Department of Electrical and Computer Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
-
Sugimoto Kiyomasa
Department of Electrical and Computer Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
関連論文
- Single-walled carbon nanotube thin film transistor made by using solution process (有機エレクトロニクス)
- Single-walled carbon nanotube thin film transistor made by using solution process (シリコン材料・デバイス)
- Early Jurassic Volcanism of the Mikabu belt:Evidence from K-Ar age of picritic basalt,Kurouchi ultramafic mass,Kanto Mountains,Japan
- A Study of Pre-Breakdown in Ultra-Thin Silicon Dioxide Films Using Carrier Separation Measurement
- Trap Density Dependent Inelastic Tunneling in Stress-Induced Leakage Current
- Trap Density Dependent Inelastic Tunneling in Stress-Induced Leakage Current
- Oxygen isotope compositions of Miocene Garam Chashma granites, Trans-Himalayas (Hindukush Range), North Pakistan
- A Trial Modification of a Surface Ionization Ion Source for Direct Sample Loading for Isotope Analysis
- Isotopic Composition of Lithium in Carbonaceous Chondrites Measured by a Modified Type Surface Ionization Mass Spectrometer
- Ellipsoidal Band Structure Effects on Maximum Ballistic Current in Silicon Nanowires
- Amperometric Electrochemical Sensor Array for On-Chip Simultaneous Imaging: Circuit and Microelectrode Design Considerations
- Integrated Bio-Imaging Sensor Array with Complementary Metal–Oxide–Semiconductor Cascode Source–Drain Follower
- Significant Reduction of Phonon Scattering Potential in 1D Si Quantum Dot Array Interconnected with Thin Oxide Layers
- CMOS Cascode Source-Drain Follower for Monolithically Integrated Biosensor Array
- Site Blocking Effect in Tracer Diffusion on a Lattice
- Ion Beam Bombardment Effect on Contacts in Solution-Processed Single-Walled Carbon Nanotube Thin Film Transistor
- Single-Walled Carbon Nanotube Thin Film Transistor Fabricated Using Solution Prepared with 9,9-Dioctyfluorenyl-2,7-diyl--Bipyridine Copolymer
- One-pot Separation of Highly Enriched (6,5)-Single-walled Carbon Nanotubes Using a Fluorene-based Copolymer
- Single-walled carbon nanotube thin film transistor fabricated using solution prepared with 9,9-dioctyfluorenyl-2,7-diyl-bipyridine copolymer
- Photosystem I Bio-Photosensor Integrated with Complementary Metal–Oxide–Semiconductor Source–Drain Follower on a Chip
- Different Chiral Selective Recognition/Extraction of (n,m)Single-walled Carbon Nanotubes Using Copolymers Carrying a Carbazole or Fluorene Moiety
- On-chip Microelectrode Capacitance Measurement for Biosensing Applications
- Phase Shift Formulation of Boundary Conditions in Rarefied Gas Dynamics
- Preparation of Various Supramolecular Assemblies and Measurement of Photoresponse Behaviors
- Analytical Compact Model of Ballistic Cylindrical Nanowire Metal–Oxide–Semiconductor Field-Effect Transistor
- Full Three-Dimensional Simulation of Ion-Sensitive Field-Effect Transistor Flatband Voltage Shifts Due to DNA Immobilization and Hybridization
- Complementary Metal–Oxide–Semiconductor Ion-Sensitive Field-Effect Transistor Sensor Array with Silicon Nitride Film Formed by Catalytic Chemical Vapor Deposition as an Ion-Sensitive Membrane
- Electron–Modulated-Acoustic-Phonon Interactions in a Coated Silicon Nanowire
- Analytical Description of Intravalley Acoustic Phonon Limited Electron Mobility in Ultrathin Si Plate Incorporating Phonon Modulation due to Plate Interfaces
- Analytic Compact Model of Ballistic and Quasi-Ballistic Cylindrical Gate-All-Around Metal--Oxide--Semiconductor Field Effect Transistors Including Two Subbands
- Analytic Circuit Model of Ballistic Nanowire Metal--Oxide--Semiconductor Field-Effect Transistor for Transient Analysis
- Three-Dimensional Simulation of DNA Sensing by Ion-Sensitive Field-Effect Transistor: Optimization of DNA Position and Orientation
- Three-Dimensional Simulation of DNA Sensing by Ion-Sensitive Field-Effect Transistor : Optimization of DNA Position and Orientation (Special Issue : Solid State Devices and Materials)
- Analytic Circuit Model of Ballistic Nanowire Metal-Oxide-Semiconductor Field-Effect Transistor for Transient Analysis (Special Issue : Solid State Devices and Materials)
- Impact of Isotope Doping on Phonon Thermal Transport in Silicon Nanowires
- Analytical Description of Inversion-Layer Quantum Effects Using the Density Gradient Model and Singular Perturbation Theory