Ion Beam Bombardment Effect on Contacts in Solution-Processed Single-Walled Carbon Nanotube Thin Film Transistor
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概要
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Effect of argon ion bombardment (AIB) on performance of solution-processed single-walled carbon nanotube (SWCNT) thin film transistor (TFT) has been investigated. AIB was applied to the source/drain contacts to reduce contact resistance. It was found that AIB enhances on-state current of TFT. Over 5 decades' on/off ratio is obtained by applying AIB. Results of transmission line method using metallic SWCNT clearly indicate that contact resistance between CNT network and Au electrode is reduced by the application of AIB.
- 2011-09-25
著者
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Nakagawa Gou
Department Of Electronics Kyushu University
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Yi Xun
Department Of Electronics Kyushu University
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Fujigaya Tsuyohiko
Department Of Applied Chemistry Graduate School Of Engineering Kyushu University
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Asano Tanemasa
Department Of Computer Science And Electronics Kyushu Institute Of Technology
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Nakashima Naotoshi
Department Of Applied Chemistry Faculty Of Engineering Kyushu University
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Ozawa Hiroaki
Department Of Applied Chemistry Graduate School Of Engineering Kyushu University
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Nakagawa Gou
Department of Electronics, Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan
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Asano Tanemasa
Department of Electronics, Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan
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Fujigaya Tsuyohiko
Department of Applied Chemistry, Graduate School of Engineering, Kyushu University, Fukuoka 819-0395, Japan
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Yi Xun
Department of Electronics, Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan
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Nakashima Naotoshi
Department of Applied Chemistry, Graduate School of Engineering, Kyushu University, Fukuoka 819-0395, Japan
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Ozawa Hiroaki
Department of Applied Chemistry, Graduate School of Engineering, Kyushu University, Fukuoka 819-0395, Japan
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