An Amorphous-Silicon Film Usable at High-Temperature : Annealing Properties of a New Fluorinated Amorphous-Silicon : II-2: AMORPHOUS FILM PREPARATION AND CHARACTERIZATION (II)

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1980-06-01

著者

• Matsumura Hideki

  Department Of Applied Electronics Tokyo Institute Of Technology

• FURUKAWA Seijiro

  Department of Physical Electronics, Faculty of Engineering, Tokyo Institute of Technology

• NAKAGOME Yoshinobu

  Department of Applied Electronics, Tokyo Institute of Technology

• Nakagome Yoshinobu

  Department Of Applied Electronics Tokyo Institute Of Technology

• Furukawa Seijiro

  Department Of Applied Electronics Tokyo Institute Of Technology

• Furukawa Seijiro

  Department Of Applied Electronics Interdisciplinary Graduate School Of Science And Engineering Tokyo

• Furukawa Seijiro

  Department Of Applied Electronics Graduate School Of Science And Technology

• Matsumura Hideki

  School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST)

• MATSUMURA Hideki

  Department of Applied Electronics, Tokyo Institute of Technology

関連論文

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• Air-Stable p-Type and n-Type Carbon Nanotube Field-Effect Transistors with Top-Gate Structure on SiN_x Passivation Films Formed by Catalytic Chemical Vapor Deposition
• Low-Resistivity Phosphorus-Doped Polycrystalline Silicon Thin Films Formed by Catalytic Chemical Vapor Deposition and Successive Rapid Thermal Annealing
• Catalytic Chemical Sputtering: A Novel Method for Obtaining Large-Grain Polycrystalline Silicon : Surfaces, Interfaces, and Films
• Control of Polycrystalline Silicon Structure by the Two-Step Deposition Method
• Annealing Effect of Pb(Zr, Ti)O_3 Ferroelectric Capacitor in Active Ammonia Gas Cracked by Catalytic Chemical Vapor Deposition System
• A Novel Nanoscale Metal Transistor Fabricated by Conventional Photolithography
• Role of Hydrogen in Polycrystalline Si by Excimer Laser Annealing
• Theoretical Considerations on Lateral Spread of Implanted Ions
• Dependency of Boron Doping Efficiency on Hydrogen Flow Rate in Hydro-Fluorinated Amorphous Silicon
• Properties of Hydro-Fluorinated Amorphous Silicon-Carbide Produced by Intermediate Species SiF_2
• The Staebler-Wronski Effect in Hydro-Fluorinated Amorphous Silicon Prepared Using the Intermediate Species SiF_2
• Photoconductive Amorphous Silicon-Carbide Produced by Intermediate Species SiF_2 and CF_4 Mixture
• An Amorphous-Silicon Film Usable at High-Temperature : Annealing Properties of a New Fluorinated Amorphous-Silicon : II-2: AMORPHOUS FILM PREPARATION AND CHARACTERIZATION (II)
• A Comparison of the Thermal Stabilities of Fluorinated and Hydrogenated Amorphous-Silicons
• Hall Mobility of Low-Temperature-Deposited Polysilicon Films by Catalytic Chemical Vapor Deposition Method
• Optically Detected Magnetic Resonance in Fluorinated Amorphous Silicon (a-Si:F, a-Si:F, H and a-Si:F, D)
• Nanometer Pattern-Mask Fabricated by Conventional Photolithography
• Photoluminescence of a-Si:H Films Prepared by Catalytic Chemical Vapor Deposition Method
• Photo-Conductive, Low Impurity-Diffusive, Heat-Resisting a-Si Formed by Glow-Discharged Decomposition of SiF_2 and H_2 Mixture : C-5: SOLAR CELLS
• Formation of Polysilicon Films by Catalytic Chemical Vapor Deposition (cat-CVD) Method
• Theoretical Considerations in Lateral Damage Distribution Formed by Ion-Implantation
• Low Temperature Deposition of Silicon Nitride by the Catalytic Chemical Vapor Deposition Method : Etching and Deposition Technology
• Orientation Dependence of Lateral Solid-Phase-Epitaxial Growth in Amorphous Si Films
• On the Mechanisms of Lateral Solid Phase Epitaxial Growth of Amorphous Si Films Evaporated on SiO_2 Patterns
• Characterization of Solid-Phase Epitaxially-Grown Silicon Films on SiO_2
• Catalytic Chemical Vapor Deposition (CTC-CVD) Method Producing High Quality Hydrogenated Amorphous Silicon
• A New X-Ray Lithographic Technique Using Total Reflection of X-Rays from a Pattern Plate
• Study on Impurity Diffusion in Glow-Discharged Amorphous Silicon
• Control of Epitaxial Relation of GaAs Film on Fluoride/Si(111) Structure
• Effect of Substrate Off-Orientation on GaAs/CaF_2/Si(111) Structure with Rotational Twin
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• Preparation and Electrical Properties of An Amorphous SiC/Crystalline Si P^+n Heterostructure
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• Study on Efficiency of Piezoelectric Semiconductor SAW Convolver
• Study of Epitaxial Growth of Rotational-Twin-Free CaF_2 Films on Si(111)
• Study on Measurement of Carrier Effective Lifetime in Furnace and Laser Annealed Diodes
• Coating techniques of metal chambers for remote catalytic chemical vapor deposition applications
• The Lattice Location of Phosphorus Atoms Implanted into Silicon
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• Mass Dependence of Critical Amorphizing Dose in Ion Implantation
• Studies on Formation Characteristics and Mechanism of SiC on Si and Metal-Silicides by Using Ion Backscattering Techniques
• The Loss Characteristics of a Semiconductor Travelling Wave Amplifier
• Study of Shallow p^+n Junction Formation Using SiGe/Si System
• Experimental Simulation on the Beam Heating Effects in Ion Implantation Techniques
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