Low Temperature Deposition of Silicon Nitride by the Catalytic Chemical Vapor Deposition Method
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概要
- 論文の詳細を見る
A new low temperature deposition method named "catalytic chemical vapor deposition (Cat-CVD or CTL-CVD)" is applied to obtain silicon nitride films. In the method, a N2H4, N2, and SiH4 gas mixture is decomposed by the catalytic or pyrolytic reaction with a heated catalyzer placed near substrates, so that silicon nitride films are deposited at substrate temperatures as low as 300°C with deposition rates near 1000 A/min, without plasma nor photochemical excitation. It is found that the resistivity, breakdown electric field and hydrogen content of the films are almost equivalent to those of thermal CVD films deposited at about 700°C, and that the diffusivity of depositing species appears large enough to obtain good stepcoverage.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-10-20
著者
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Matsumura Hideki
Department Of Applied Electronics Tokyo Institute Of Technology
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Matsumura Hideki
Department of Physical Electronics, Hiroshima University, Saijo, Higashi-Hiroshima 724, Japan
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