Study of Shallow p^+n Junction Formation Using SiGe/Si System
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概要
- 論文の詳細を見る
The fabrication of p^+n shallow junctions using strained grown SiGe/Si heterostructure was studied. Because of the lower chemical potential of B in Side, the effective diffusion constant of B reduces in the SiGe/Si interface region when B diffuses from the Side layer to the Si layer. We have proposed a new method for shallow junction formation using this phenomenon and have shown that the profile of implanted B in SiGe/Si system is kept shallow by thermal treatment compared to that in Si.
- 社団法人応用物理学会の論文
- 1993-12-30
著者
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Furukawa Seijiro
Department Of Electronics Interdisciplinary Graduate School Of Science And Engineering Tokyo Institu
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Furukawa Seijiro
Department Of Applied Electronics Graduate School Of Science And Technology
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SAKANO Junichi
Department of Electronics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Insti
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Sakano Junichi
Department Of Electronics Interdisciplinary Graduate School Of Science And Engineering Tokyo Institu
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