Furukawa Seijiro | Department Of Applied Electronics Tokyo Institute Of Technology
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概要
関連著者
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Furukawa Seijiro
Department Of Applied Electronics Tokyo Institute Of Technology
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Furukawa Seijiro
Department Of Applied Electronics Graduate School Of Science And Technology
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Matsumura Hideki
Department Of Applied Electronics Tokyo Institute Of Technology
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FURUKAWA Seijiro
Department of Physical Electronics, Faculty of Engineering, Tokyo Institute of Technology
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Furukawa Seijiro
Department Of Applied Electronics Interdisciplinary Graduate School Of Science And Engineering Tokyo
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NAKAGOME Yoshinobu
Department of Applied Electronics, Tokyo Institute of Technology
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Nakagome Yoshinobu
Department Of Applied Electronics Tokyo Institute Of Technology
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Matsumura Hideki
School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST)
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MATSUMURA Hideki
Department of Applied Electronics, Tokyo Institute of Technology
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Ishiwara Hiroshi
Department Of Applied Electronics Tokyo Institute Of Technology
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Maeda Masaaki
Department Of Applied Electronics Tokyo Institute Of Technology
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NAGATOMO Masao
Department of Applied Electronics, Tokyo Institute of Technology
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Nagatomo Masao
Department Of Applied Electronics Tokyo Institute Of Technology
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ISHIWARA Hiroshi
Department of Applied Electronics, Tokyo Institute of Technology
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Ishiwara Hiroshi
Department of Advanced Applied Electronics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
著作論文
- An Amorphous-Silicon Film Usable at High-Temperature : Annealing Properties of a New Fluorinated Amorphous-Silicon : II-2: AMORPHOUS FILM PREPARATION AND CHARACTERIZATION (II)
- A Comparison of the Thermal Stabilities of Fluorinated and Hydrogenated Amorphous-Silicons
- Study on Impurity Diffusion in Glow-Discharged Amorphous Silicon
- Studies on Formation Characteristics and Mechanism of SiC on Si and Metal-Silicides by Using Ion Backscattering Techniques