Relationship between Electrical Conductivity and Charged-Dangling-Bond Density in Nitrogen- and Phosphorus-Doped Hydrogenated Amorphous Silicon

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概要

• 論文の詳細を見る

• Comparing the results for nitrogen doping in hydrogenated amorphous silicon (a-Si:H) with those for phosphorus doping, the increase in the charged-dangling-bond density estimated by equilibrium electron spin resonance (ESR) and light-induced ESR is found to have no apparent correlation with the increase in the electrical conductivity. The results for varying concentrations of nitrogen doping are also consistent with this finding. The increase of potential fluctuations due to structural disorder by nitrogen doping in an a-Si:H network appears to be the dominant origin of the increase of charged dangling bonds in the case of nitrogen doping.

• 社団法人応用物理学会の論文
• 1994-09-15

著者

• MASUDA Atsushi

  Department of Pathology and Cell Regulation, Kyoto Prefectural University of Medicine

• MASUDA Atsushi

  Japan Advanced Institute of Science and Technology

• SHIMIZU Tatsuo

  Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University

• KUMEDA Minoru

  Laboratory for Development of Engineering Materials, Faculty of Technology, Kanazawa University

• Shimizu Tadao

  Department Of Physics University Of Tokyo

• Shimizu T

  Department Of Electrical And Electronic Engineering Kanazawa University

• Itoh K

  Jichi Medical School Tochigi Jpn

• Kumeda M

  Kanazawa Univ. Kanazawa Jpn

• Kumeda Minoru

  Laboratory For Development Of Engineering Materials Faculty Of Engineering Kanazawa University

• Masuda A

  Japan Advanced Institute Of Science And Technology

• Shimizu T

  Chiba Univ. Chiba Jpn

• Zhou J‐h

  Department Of Electrical And Computer Engineering Faculty Of Engineering Kanazawa University

• Zhou Jiang-huai

  Department Of Electrical And Computer Engineering Faculty Of Technology Kanazawa University

• ITOH Ken-ichi

  Department of Electrical and Computer Engineering, Faculty of Technology, Kanazawa University

• Itoh Ken-ichi

  Department Of Electrical And Computer Engineering Faculty Of Technology Kanazawa University

• Masuda Atsushi

  Department Of Neurosurgery Shimizu Hospital

• Shimizu Tatsuo

  Department Of Applied Physics University Of Tokyo

• Zhou Jiang-huai

  Department Of Electrical And Computer Engineering Faculty Of Engineering Kanazawa University

• Masuda Atsushi

  Department Of Neurosurgery Eisyokai Yoshida Hospital

• Masuda Atsushi

  Department of Electrical and Computer Engineering, Faculty of Engineering,

• KUMEDA Minoru

  Department of Electronics Faculty of Technology, Kanazawa University

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