ESR and Constant Photocurrent Studies of Surface and Bulk Defects in a-Si:H
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概要
- 論文の詳細を見る
Surface and bulk defect densities in undoped a-Si:H films on a quartz substrate are estimated from the thickness dependence of the defect density by ESR and constant photocurrent method (CPM). For the first time, the thickness of a defective surface layer in a-Si:H is determined by ESR to be about 200 Å. The decrease in surface spin density by HF etching treatment and the difference in photoconductivities measured by illumination from different sides suggest that the free surface layer is more defective than the interface layer on a quartz substrate.
- 社団法人応用物理学会の論文
- 1987-11-20
著者
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MORIMOTO Akiharu
Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University
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SHIMIZU Tatsuo
Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University
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Kumeda M
Kanazawa Univ. Kanazawa Jpn
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Kumeda Minoru
Department Of Electrical And Computer Engineering Faculty Of Engineering Kanazawa University
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Shimizu T
Chiba Univ. Chiba Jpn
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Moto Akihiro
The Authors Are With The Research Center For Superconductor Photonics Osaka University
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XU Xixiang
Department of Electronics, Faculty of Technology, Kanazawa University
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Shimizu Tatsuo
Department Of Applied Physics University Of Tokyo
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Morimoto Akiharu
Department of Electrical and Computer Engineering, Faculty of Engineering,
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Kumeda Minoru
Department of Electric and Electronic Engineering. Kanazawa University
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