Structural Studies on Hydrogenated Amorphous Germanium-Carbon Films Prepared by RF Sputtering
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概要
- 論文の詳細を見る
ESR signals for hydrogenated amorphous Ge-C alloy films prepared by magnetron sputtering were deconvoluted into signals originating from a Ge dangling bond and a C dangling bond. It was determined from the results of the deconvolution that the number of Ge dangling bonds per Ge atom is ten to sixty times larger than that of C dangling bonds per C atom. In contrast to the case of Ge-Si alloy films, in which the number of Ge dangling bonds per Ge atom decreases by increasing the Si content because of the increase in the density of Si-H bonds, the number of Ge dangling bonds per Ge atom increases by increasing the C content in Ge-C alloy films, although the density of C-H bonds increases. This finding may be caused by an increase in the structural randomness because the difference in the covalent bond radius between Ge and C is quite large.
- 社団法人応用物理学会の論文
- 1998-04-15
著者
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SHIMIZU Tatsuo
Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University
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KUMEDA Minoru
Department of Electronics, Faculty of Technology, Kanazawa University
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Kumeda Minoru
Department Of Electrical And Computer Engineering Faculty Of Engineering Kanazawa University
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MASUDA Akio
Department of Industrial Chemistry, Faculty of Technology, Tokyo Metropolitan University
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Masuda Akio
Department Of Electrical And Computer Engineering Faculty Of Engineering Kanazawa University
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Shimizu Tatsuo
Department Of Applied Physics University Of Tokyo
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Kumeda Minoru
Department of Electric and Electronic Engineering. Kanazawa University
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