The g-Values of Defects in Amorphous C, Si and Ge
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概要
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The g-values of the ESR signal have been calculated for dangling bonds in amorphous C, Si and Ge and for weak bonds in amorphous Si by using the EHT method. Effects on g-values of changing the bond angle, bond length and dihedral angle have been calculated and found that the change of g-values due to fluctuations of the amorphous structure is dominated by the change of the bond angle. Although the calculated g-values depend on the cluster size, the results are useful for qualitative considerations on the dangling bonds and the weak bonds.
- 社団法人応用物理学会の論文
- 1981-09-05
著者
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SHIMIZU Tatsuo
Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University
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KUMEDA Minoru
Department of Electronics, Faculty of Technology, Kanazawa University
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Ishii N
Central Research Laboratory Tokyo Electron Ltd.
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Ishii Nobuo
Corporate R&d Central Research Laboratory Tokyo Electron Ltd.
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Kumeda M
Kanazawa Univ. Kanazawa Jpn
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Kumeda Minoru
Department Of Electrical And Computer Engineering Faculty Of Engineering Kanazawa University
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ISHII Nobuhiko
Fukui High School
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Shimizu Tatsuo
Department Of Applied Physics University Of Tokyo
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Kumeda Minoru
Department of Electric and Electronic Engineering. Kanazawa University
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