Preparation of Epitaxial Ge Film on Si by Pulsed Laser Ablation Using Molten Droplets
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-04-01
著者
-
YAMADA Satoru
Department of Periodontology, Tokyo Dental College
-
YONEZAWA Yasuto
Industrial Research Institute of Ishikawa (IRII)
-
MINAMIKAWA Toshiharu
Industrial Research Institute of Ishikawa (IRII)
-
Yamada S
Electronic Imaging And Devices Research Laboratory Fuji Xerox
-
Yamada So
Electronic Imaging And Devices Research Laboratory Fuji Xerox Co. Lid.
-
MORIMOTO Akiharu
Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University
-
SHIMIZU Tatsuo
Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University
-
Yamada Shoji
Shizuoka Institute Of Science And Technology
-
YAMADA Satoru
Research Center for Heavy Ion Medicine, Gunma University
-
Shimizu T
Univ. Occupational And Environmental Health Jpn
-
Moto A
Department Of Electrical And Electronic Engineering Kanazawa University
-
Minamikawa Toshiharu
Industrial Research Institute Of Ishikawa
-
Shimizu Tadao
Department Of Physics University Of Tokyo
-
Shimizu T
Department Of Electrical And Electronic Engineering Kanazawa University
-
Shimizu T
Faculty Of Engineering Chiba University
-
Yamada S
Research Center For Heavy Ion Medicine Gunma University
-
Shimizu Tatsuo
Faculty Of Technology
-
OGURI Shinya
Department of Electrical and Computer Engineering, Kanazawa University
-
Shimizu T
Chiba Univ. Chiba Jpn
-
Miura T
Environmental Health Sciences Division National Lnstitute For Environmental Studies:(present Address
-
Yamada Satoru
Department Of Chemistry Graduate School Of Science Osaka University
-
Moto Akihiro
The Authors Are With The Research Center For Superconductor Photonics Osaka University
-
Yonezawa Y
Industrial Research Institute Of Ishikawa
-
Yonezawa Yasuto
Industrial Research Institute Of Ishikawa
-
Oguri S
Osaka Prefecture Univ. Osaka
-
Oguri Shinya
Department Of Chemistry Faculty Of Arts And Sciences Osaka Prefecture University
-
Shimizu Tadao
Department Of Industrial Chemistry Chiba Institute Of Technology
-
Shimizu Tadao
Department Of Physics Faculty Of Science The University Of Tokyo
-
Shimizu Tatsuo
Department Of Applied Physics University Of Tokyo
-
Morimoto Akiharu
Department of Electrical and Computer Engineering, Faculty of Engineering,
関連論文
- Application of 4-META/MMA-TBB resin for fixation of membrane to tooth in guided tissue regeneration in dog
- Preparation of Low-Stress SiN_x Films by Catalytic Chemical Vapor Deposition at Low Temperatures
- Improvement of Deposition Rate by Sandblasting of Tungsten Wire in Catalytic Chemical Vapor Deposition
- Moisture-Resistive Properties of SiN_x Films Prepared by Catalytic Chemical Vapor Deposition below 100℃ for Flexible Organic Light-Emitting Diode Displays
- Effect of Atomic Hydrogen on Preparation of Highly Moisture-Resistive SiN_x Films at Low Substrate Temperatures
- Highly Moisture-Resistive SiN_x Films Prepared by Catalytic Chemical Vapor Deposition
- Annealing Effect of Pb(Zr, Ti)O_3 Ferroelectric Capacitor in Active Ammonia Gas Cracked by Catalytic Chemical Vapor Deposition System
- Senior-Loken syndrome associated with mental retardation and microcephaly
- Influence of Buffer Layers on Lead Magnesium Niobate Titanate Thin Films Prepared by Pulsed Laser Ablation
- Effect of Oxygen Pressure on (Ba_xSr_)TiO_3 Thin Films by Pulsed Laser Ablation
- Structural and Electrical Characterization of Oxidated, Nitridated and Oxi-nitridated (100) GaAs Surfaces
- Fast and Slow Processes in Light-Induced Electron Spin Resonance in Hydrogenated Amorphous Si-N Films
- Preparation and Electrochromic Properties of RF-Sputtered NiO_x Films Prepared in Ar / 0_2 / H_2 Atmosphere
- Electrochromic Absorption Spectra of Mo_cW_O_3 Films : A: Applications and Fundamentals
- Absorption Bands of Eleclrochemically-Colored Films of WO_3, MoO_3 and Mo_cW_O_3
- Electron Diffusion in Amorphous Tungsten Oxide Films
- Proton Nuclear Magnetic Resonance Studies on Structural Changes Induced by Annealing of Hydrogenated Amorphous Silicon Films Prepared at High Deposition-Rate
- Mossbauer Time Spectra of the Nuclear Forward Scattering from Coherently Vibrating Resonant Nuclei
- New Accelerator Facility for Carbon-Ion Cancer-Therapy
- Beam-Profile Control Using an Octupole Magnet
- Reduction of Interface Defect Density by Hydrogen Dilution in a-Si:H/ZnS Multilayer Films
- Theoretical and Experimental Studies of a Charge-Transfer Mechanism for Biomimetic Oxygenations of Phenol and Indol Derivatives
- Ab Initio Molecular Orbital Studies of Singlet Oxygen Reactions of Olefins, Enol Ethers, and Enamines
- Identification of a New Defect in Silicon Nitride Films
- Thermal Equilibration of Defect Density in Hydrogenated Amorphous Silicon-Germanium Alloys
- Comparison between ESR and CPM for the Gap States in a-Si-Ge:H
- PLAP-1 : A novel molecule regulating homeostasis of periodontal tissues
- Temperature Simulation of Cooling Process of Ge Droplets in Laser Droplet Epitaxy(Surfaces, Interfaces, and Films)
- Preparation of Twin- and Crack-Free LiNbO_3 Films by Pulsed Laser Ablation Using Nucleation Process at High Temperature : Surfaces, Interfaces, and Films
- Rotational Honeycomb Epitaxy of Ru Thin Films on Sapphire (0001) Substrate : Surfaces, Interfaces, and Films
- Preparation of Pb(Zn_Ti_)O_3 Films by Laser Ablation
- Thermal Analysis of Target Surface in the Ba-Y-Cu-O Film Preparation by Laser Ablation Method
- Preparation of Ba-Y-Cu-O Superconducting Films by Laser Ablation with and without Laser Irradiation on Growing Surface : Special Section : Solid State Devices and Materials 2 : Thin Film Devices and Superconductors
- a-Si_O_x:H Films Prepared by Direct Photo-CVD Using CO_2 Gas : Condensed Matter
- Preparation of Ba_2YCu_3O_x Superconducting Films by Laser Evaporation and Rapid Laser Annealing : Electrical Properties of Condensed Matter
- Enhanced Conversion Efficiencies of Cu_2ZnSnS_4-Based Thin Film Solar Cells by Using Preferential Etching Technique
- Mechanism of Stoichiometric Deposition of Volatile Elements in Multimetal-Oxide Films Prepared by Pulsed Laser Ablation
- Annealing Temperature Dependence of MgO Substrates on the Quality of YBa_2Cu_3O_x Films Prepared by Pulsed Laser Ablation
- Effect of βtricalcium phosphate particle size on recombinant human platelet-derived growth factor-BB-induced regeneration of periodontal tissue in dog
- Application of 4-META/MMA-TBB resin for fixation of membrane to tooth in guided tissue regeneration in dog
- Cross-Sectional Transmission Electron Microscope Observation of Small Structures Made by Field-Induced Scanning Tunneling Microscope Fabrication
- Normal-Super-Normal Junction Fabricated in a Split-Gate Wire ( Quantum Dot Structures)
- Nano-Fabrication on GaAs Surface by Resist Process with Scanning Tunneling Microscope Lithography ( Scanning Tunneling Microscopy)
- Fabrication of a Split-Gate quantum Wire Having a Ferromagnetic Dot
- Track Center Servo and Radial Tilt Servo System for a Digital Versatile Rewritable Disc(DVD-RAM)
- Influence of Sub-Gap Illumination on Light-Induced ESR in Undoped a-Si:H
- Exchangeability Test on Φ90 mm/600 MB Phase-Change Optical Disks for Common Specifications
- Temperature-Independent Photoluminescence in Amorphous Si_C_x:(F,H) Films with Low Defect Density
- Glow Discharge a-Si_C_x: H Films Studied by ESR and IR Measurements
- ESR and IR Studies on a-Si_Ge_x: H Prepared by Glow Discharge Decomposition
- Properties of Hydrogenated Amorphous Si-N Prepared by Various Methods
- Thin Film Patterning by Laser Lift-Off
- Comparative Study of Defect Densities Evaluated by Electron Spin Resonance and Constant Photocurrent Method in Undoped and N-Doped Hydrogenated Amorphous Silicon
- Electron-Beam-Induced Nucleation Centers and Selective Deposition of Thin Zinc Films
- Photocreated Defects in Very Thin Hydrogenated Amorphous Silicon Films : Semiconductors
- Preparation of Epitaxial Ge Film on Si by Pulsed Laser Ablation Using Molten Droplets
- Removal of Surface Oxides on Copper by Pulsed Laser lrradiation
- A New Method to Estimate Grain Boundary Trap State Density in Poly-Si TFTs
- Device Simulation with Quasi Three-Dimensional Temperature Analysis for Short-Channel Poly-Si Thin-Film Transistor
- Specific Effects of Oxygen Molecule and Plasma on Thin-Film Growth of Y-Ba-Cu-O and Bi-Sr-(Ca)-Cu-O Systems
- Recombination Radiation as Possible Mechanism of Light Emission from Reverse-Biased p-n Junctions under Breakdown Condition
- Second-Harmonic Generation and Relaxation in Polyurea Thin Films Prepared by Vapor Deposition Polymerization
- Epitaxial Growth of Hexagonal CdS Films on Hydrogen-Terminated Si(111) Substrates
- NMR and IR Studies on Hydrogenated Amorphous Si_C_x Films
- Telmisartan but Not Candesartan Affects Adiponectin Expression In Vivo and In Vitro
- Study on Estimation of Metal Film Thickness by Attenuated Total Reflection
- Magneto-Optical Characteristics of Bi-Substituted Rare-Earth Iron Garnet Films Prepared by Laser Ablation
- Preparation of Pb(Zr, Ti)O_3 Films on Si Substrate by Laser Ablation
- Influence of Laser Fluence on Structural and Ferroelectric Properties of Lead-Zirconate-Titanate Thin Films Prepared by Laser Ablation : Thin Films
- Annealing Studies on Hydrogenated Amorphous Silicon-Tin Films
- ESR and Raman Studies on Hydrogenated Amorphous Si-Sn
- A Case of Uterine Choriocarcinoma with Spontaneous Rupture Twenty-Three Years following the Antecedent Pregnancy
- Effects of All-trans Retinoic Acid on Choriocarcinoma Cells in vitro
- Spectroscopic Study on N_O-Plasrma Oxidation of Hydrogenated Amorphous Silicon and Behavior of Nitrogen
- Effect of Charged Defects on Properties of Amorphous Si-Based Alloys
- β-tricalcium phosphate and basic fibroblast growth factor combination enhances periodontal regeneration in intrabony defects in dogs
- Correlation between Deposition of Immuno-Components and Infiltration Pattern of Polymorphonuclear Leukocytes in the Lesions of Chronic Urticaria
- ESR Studies on the Light-Induced Effect in Si-Based Amorphous Semiconductors
- Impairment of MicrobiaI Killing and Superoxide-Producing Activities of Alveolar Macrophages by a Low Level of Ozone
- Reduction of Droplet Formatiom by Reducing Target Etching Rate in Pulsed Laser Ablation
- Laser-Irradiation Induced a-Axis Orientation in c-Axis-Oriented YBa_2Cu_3O_x Films Prepared by Pulsed Laser Ablation
- ESR and X-Ray Diffraction Studies on Ba-Y-Cu-O Superconductors : Electrical Properties of Condensed Matter
- Preparation of Ti-Al-N Electrode Films by Pulsed Laser Ablation for Lead-Zirconate-Titanate Film Capacitors
- Highty Oriented Pb(Zr, Ti)O_3 Thin Films Prepared by Pulsed Laser Ablation GaAs and Si Substrates with MgO Buffer Layer
- Fatigue Behavior in Lead-Zirconate-Titanate Thin-Film Capacitors Prepared by Pulsed Laser Ablation on Ni-Alloy Electrodes
- NH_3-Plasma-Nitridation Process of (100) GaAs Surface Observed by Angle-Dependent X-Ray Photoelectron Spectroscopy
- Theoretical Study on the Second Hyperpolarizabilities for Small Radical Systems
- Theoretical Studies on the Second Hyperpolarizabilities of Trithiapentalene and Its Donor and Acceptor Disubstituted Species
- Negative Second Hyperpolarizability of the Nitronyl Nitroxide Radical
- Light-Induced Effects and Their Annealing Behavior in a-Si:H
- Effect of Reduction in Impurity Content for a-Si:H Films
- ESR and Constant Photocurrent Studies of Surface and Bulk Defects in a-Si:H
- Hydrogen Evolution from Amorphous Si-N Films
- Light-Induced Effects in a-Si:H Studied by ESR and Electrical Measurements
- Photoluminescence in Glow Discharge Deposited Amorphous Si_C_x: H Films
- Structural Analysis on T_c Variation of Bi_2Sr_Ca_Cu_2O_
- Structure and Defects in Amorphous Si-O Films
- Synthesis and Characterization of Amorphous Si-Zn-S Alloy Films
- Influence of Buffer Layers on Lead Magnesium Niobate Titanate Thin Films Prepared by Pulsed Laser Ablation