Yonezawa Y | Industrial Research Institute Of Ishikawa

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概要

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著作論文

Effect of Atomic Hydrogen on Preparation of Highly Moisture-Resistive SiN_x Films at Low Substrate Temperatures
Highly Moisture-Resistive SiN_x Films Prepared by Catalytic Chemical Vapor Deposition
Annealing Effect of Pb(Zr, Ti)O_3 Ferroelectric Capacitor in Active Ammonia Gas Cracked by Catalytic Chemical Vapor Deposition System
Effect of Oxygen Pressure on (Ba_xSr_)TiO_3 Thin Films by Pulsed Laser Ablation
Temperature Simulation of Cooling Process of Ge Droplets in Laser Droplet Epitaxy(Surfaces, Interfaces, and Films)
Preparation of Twin- and Crack-Free LiNbO_3 Films by Pulsed Laser Ablation Using Nucleation Process at High Temperature : Surfaces, Interfaces, and Films
Preparation of Pb(Zn_Ti_)O_3 Films by Laser Ablation
Thermal Analysis of Target Surface in the Ba-Y-Cu-O Film Preparation by Laser Ablation Method
Preparation of Ba-Y-Cu-O Superconducting Films by Laser Ablation with and without Laser Irradiation on Growing Surface : Special Section : Solid State Devices and Materials 2 : Thin Film Devices and Superconductors
Preparation of Ba_2YCu_3O_x Superconducting Films by Laser Evaporation and Rapid Laser Annealing : Electrical Properties of Condensed Matter
Preparation of Bi-Iron-Garnet Films on Platinized Si Substrate with Bi-Substituted Y-Iron-Garnet Template Layer (レーザーによる薄膜形成と制御小特集号)
Mechanism of Stoichiometric Deposition of Volatile Elements in Multimetal-Oxide Films Prepared by Pulsed Laser Ablation
Annealing Temperature Dependence of MgO Substrates on the Quality of YBa_2Cu_3O_x Films Prepared by Pulsed Laser Ablation
Preparation of Epitaxial Ge Film on Si by Pulsed Laser Ablation Using Molten Droplets
Removal of Surface Oxides on Copper by Pulsed Laser lrradiation
Hydrogen Incorporation Scheme in Amorphous-Microcrystalline Mixed-Phase Si: H Films
Spectroscopic Study on N_O-Plasrma Oxidation of Hydrogenated Amorphous Silicon and Behavior of Nitrogen
Reduction of Droplet Formatiom by Reducing Target Etching Rate in Pulsed Laser Ablation
Preparation of Ti-Al-N Electrode Films by Pulsed Laser Ablation for Lead-Zirconate-Titanate Film Capacitors
Highty Oriented Pb(Zr, Ti)O_3 Thin Films Prepared by Pulsed Laser Ablation GaAs and Si Substrates with MgO Buffer Layer
Fatigue Behavior in Lead-Zirconate-Titanate Thin-Film Capacitors Prepared by Pulsed Laser Ablation on Ni-Alloy Electrodes
NH_3-Plasma-Nitridation Process of (100) GaAs Surface Observed by Angle-Dependent X-Ray Photoelectron Spectroscopy
Evidence of the Existence of SiF_4 Molecules in Fluorinated Amorphous Silicon

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