MUROI Susumu | Ishikawa Seisakusho, Ltd.
スポンサーリンク
概要
関連著者
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Matsumura Hideki
Japan Advanced Inst. Sci. And Technol. (jaist) Ishikawa Jpn
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Nakamura T
National Defense Acad. Kanagawa Jpn
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MASUDA Atsushi
Japan Advanced Institute of Science and Technology
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NIKI Toshikazu
Japan Science and Technology Agency (JST)
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HEYA Akira
Industrial Research Institute of Ishikawa (IRII)
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YONEZAWA Yasuto
Industrial Research Institute of Ishikawa (IRII)
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MINAMIKAWA Toshiharu
Industrial Research Institute of Ishikawa (IRII)
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MUROI Susumu
Ishikawa Seisakusho, Ltd.
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UMEMOTO Hironobu
Japan Advanced Institute of Science and Technology (JAIST)
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HEYA Akira
JAIST(Japan Advanced Institute of Science and Technology)
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Niki Toshikazu
Ishikawa Seisakusho Ltd.
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TAKANO Masahiro
Industrial Research Institute of Ishikawa (IRII)
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MINAMI Shigehira
Ishikawa Seisakusho, Ltd.
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IZUMI Akira
Japan Advanced Institute of Science and Technology (JAIST)
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Minamikawa Toshiharu
Industrial Research Institute Of Ishikawa
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Nakamura T
Department Of Earth And Ocean Sciences National Defense Academy
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Matsumura Hideki
School Of Materials Science Japan Advanced Institute Of Science And Technology (jaist)
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Izumi A
School Of Materials Science Japan Advanced Institute Of Science And Technology (jaist)
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Muroi Susumu
Ishikawa Seisakusho Ltd.
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Masuda A
Japan Advanced Institute Of Science And Technology
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Miura T
Environmental Health Sciences Division National Lnstitute For Environmental Studies:(present Address
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Yonezawa Y
Industrial Research Institute Of Ishikawa
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Yonezawa Yasuto
Industrial Research Institute Of Ishikawa
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高野 昌宏
石川県工業試験場機械金属部
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OSONO Tetsuo
Japan Advanced Institute of Science and Technology (JAIST)
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DOGUCHI Yoshiteru
Industrial Research Institute of Ishikawa (IRII)
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IKARI Tokuo
Kuraray Co., Ltd.
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Minami Shigehira
Ishikawa Seisakusho Ltd.
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Takano Masahiro
Industrial Research Institute of Ishikawa
著作論文
- Preparation of Low-Stress SiN_x Films by Catalytic Chemical Vapor Deposition at Low Temperatures
- Improvement of Deposition Rate by Sandblasting of Tungsten Wire in Catalytic Chemical Vapor Deposition
- Moisture-Resistive Properties of SiN_x Films Prepared by Catalytic Chemical Vapor Deposition below 100℃ for Flexible Organic Light-Emitting Diode Displays
- Effect of Atomic Hydrogen on Preparation of Highly Moisture-Resistive SiN_x Films at Low Substrate Temperatures
- Highly Moisture-Resistive SiN_x Films Prepared by Catalytic Chemical Vapor Deposition