Preparation of Ti-Al-N Electrode Films by Pulsed Laser Ablation for Lead-Zirconate-Titanate Film Capacitors

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概要

• 論文の詳細を見る

• Titanium-aluminum-nitride (Ti-Al-N; TAN) electrode films were prepared by pulsed laser ablation on (100)Si and (100)MgO substrates for ferroelectric lead-zirconate-titanate (Pb(Zr_<0.52>Ti_<0.48>)O_3; PZT) thin-film capacitors. Capacitors with rather randomly oriented PZT films on the TAN/(100)Si did not show a ferroelectric hysteresis loop, but the capacitor with preferentially [100]-oriented PZT film on the TAN/(100)MgO did. This suggests that a TAN-electrode film was grown on (100)MgO with a high oxidation resistance at the high temperature employed for ferroelectric oxide preparation.

• 社団法人応用物理学会の論文
• 1996-02-15

著者

• MORIMOTO Akiharu

  Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University

• SHIMIZU Tatsuo

  Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University

• YAMANAKA Yasuhiro

  Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University

• Shimizu T

  Univ. Occupational And Environmental Health Jpn

• Moto A

  Department Of Electrical And Electronic Engineering Kanazawa University

• Shimizu Tadao

  Department Of Physics University Of Tokyo

• Shimizu T

  Department Of Electrical And Electronic Engineering Kanazawa University

• Shimizu T

  Chiba Univ. Chiba Jpn

• Moto Akihiro

  The Authors Are With The Research Center For Superconductor Photonics Osaka University

• Yonezawa Y

  Industrial Research Institute Of Ishikawa

• Yamanaka Y

  Nec Corp. Kawasaki Jpn

• Shimizu Tatsuo

  Department Of Applied Physics University Of Tokyo

• Yamanaka Yasuhiro

  Department Of Applied Chemistry And Bioengineering Graduate School Of Engineering Osaka City University

• Morimoto Akiharu

  Department of Electrical and Computer Engineering, Faculty of Engineering,

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