Thin Film Patterning by Laser Lift-Off
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-05-15
著者
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MORIMOTO Akiharu
Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University
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SHIMIZU Tatsuo
Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University
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KUMEDA Minoru
Department of Electronics, Faculty of Technology, Kanazawa University
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Shimizu T
Univ. Occupational And Environmental Health Jpn
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Moto A
Department Of Electrical And Electronic Engineering Kanazawa University
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Shimizu Tadao
Department Of Physics University Of Tokyo
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Shimizu T
Department Of Electrical And Electronic Engineering Kanazawa University
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Shimizu T
Faculty Of Engineering Chiba University
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Chen Xinqi
Department Of Electronic Science And Engineering Kyoto University
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Kumeda M
Kanazawa Univ. Kanazawa Jpn
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Kumeda Minoru
Department Of Electrical And Computer Engineering Faculty Of Engineering Kanazawa University
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Shimizu Tatsuo
Faculty Of Technology
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CHEN Xuekang
Department of Electric and Electronic Engineering. Kanazawa University
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Shimizu T
Chiba Univ. Chiba Jpn
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Chen X
Department Of Electrical And Electronic Engineering Kanazawa University
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Moto Akihiro
The Authors Are With The Research Center For Superconductor Photonics Osaka University
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Shimizu Tadao
Department Of Industrial Chemistry Chiba Institute Of Technology
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Shimizu Tadao
Department Of Physics Faculty Of Science The University Of Tokyo
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Shimizu Tatsuo
Department Of Applied Physics University Of Tokyo
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Morimoto Akiharu
Department of Electrical and Computer Engineering, Faculty of Engineering,
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Kumeda Minoru
Department of Electric and Electronic Engineering. Kanazawa University
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KUMEDA Minoru
Department of Electronics Faculty of Technology, Kanazawa University
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- Proton Nuclear Magnetic Resonance Studies on Structural Changes Induced by Annealing of Hydrogenated Amorphous Silicon Films Prepared at High Deposition-Rate
- Mossbauer Time Spectra of the Nuclear Forward Scattering from Coherently Vibrating Resonant Nuclei
- Reduction of Interface Defect Density by Hydrogen Dilution in a-Si:H/ZnS Multilayer Films
- Identification of a New Defect in Silicon Nitride Films
- Thermal Equilibration of Defect Density in Hydrogenated Amorphous Silicon-Germanium Alloys
- Comparison between ESR and CPM for the Gap States in a-Si-Ge:H
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- Properties of Hydrogenated Amorphous Si-N Prepared by Various Methods
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- Comparative Study of Defect Densities Evaluated by Electron Spin Resonance and Constant Photocurrent Method in Undoped and N-Doped Hydrogenated Amorphous Silicon
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- Photocreated Defects in Very Thin Hydrogenated Amorphous Silicon Films : Semiconductors
- Partial Recovery of Photodegradation at Room Temperature in Hydrogenated Amorphous Silicon
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- Role of Hydrogen and Fluorine in Amorphous Silicon as Elucidated by NMR and ESR
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- Influence of Hydrogen Content and Si-H Bond Structure on Photocreated Dangling Bonds in Hydrogenated Amorphous Silicon Films
- Light-Induced ESR in Variously Treated Hydrogenated Amorphous Silicon
- Relationship between Electrical Conductivity and Charged-Dangling-Bond Density in Nitrogen- and Phosphorus-Doped Hydrogenated Amorphous Silicon
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- Contribution of Floating Bonds to Photocreation of Defects in a-Si:H
- Structure of Films Prepared by Glow Discharge Decomposition of Hexafluorodisilane
- Hydrogen Incorporation Scheme in a-Si_C_x:H
- Rate Equations for the Creation of Various Metastable Dangling Bonds in a-Si:H Mediated by Floating Bonds
- Properties of Amorphous Si Prepared by RF Sputtering with a High Ar Pressure
- Influence of Oxygen and Deposition Conditions on RF-Sputtered Amorphous Si Films
- Structural Studies on Hydrogenated Amorphous Germanium-Carbon Films Prepared by RF Sputtering
- NMR and ESR Studies on a-Si:H Prepared by Glow Discharge Decomposition of Si_2H_6
- ESR Study on Silica Exposed to Glow-Discharge Plasma and UV Light
- A Model for the Staebler-Wronski Effect Based on Charged Impurities
- The Effects of H and F on the ESR Signals in a-Si
- The g-Values of Defects in Amorphous C, Si and Ge
- Effect of Charged Defects on Properties of Amorphous Si-Based Alloys
- ESR Studies on the Light-Induced Effect in Si-Based Amorphous Semiconductors
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- On the Narrow Lorentzian ESR Signal in Ge-S Glasses
- Effect of Sb Incorporation in Ge-S Glasses
- Plasma-Hydrogenation Effects in Doped CVD Amorphous Silicon Films
- Influence of Various Dopants on Electrical and Optical Properties of Amorphous Ge_S_
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- Electronic-structure calculations for BC radical by density-functional theory
- Structural Analysis on T_c Variation of Bi_2Sr_Ca_Cu_2O_
- Current Transport in Doped Polycrystalline Silicon
- Structure and Defects in Amorphous Si-O Films
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