Influence of Hydrogen Content and Si-H Bond Structure on Photocreated Dangling Bonds in Hydrogenated Amorphous Silicon Films
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-08-15
著者
-
SHIMIZU Tatsuo
Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University
-
KUMEDA Minoru
Department of Electronics, Faculty of Technology, Kanazawa University
-
Nishino T
Mie Univ. Tsu Jpn
-
Shimizu T
Univ. Occupational And Environmental Health Jpn
-
ZHANG Qing
Department of Nephrology, Yan Tai Yu Huang Ding Hospital, Qing Dao University School of Medicine
-
Shimizu T
Department Of Electrical And Electronic Engineering Kanazawa University
-
Shimizu T
Faculty Of Engineering Chiba University
-
Kumeda M
Kanazawa Univ. Kanazawa Jpn
-
Kumeda Minoru
Department Of Electrical And Computer Engineering Faculty Of Engineering Kanazawa University
-
Shimizu T
Chiba Univ. Chiba Jpn
-
Zhang Q
Zhongshan Univ. Guangzhou Chn
-
NISHINO Takayuki
Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University
-
TAKASHIMA Hideki
Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University
-
Zhang Qing
Department Of Biochemistry Ii Nagoya University Graduate School Of Medicine
-
Nishino Takayuki
Department Of Computer And Mathematical Sciences Graduate School Of Information Sciences
-
Shimizu Tatsuo
Department Of Applied Physics University Of Tokyo
-
Takashima Hideki
Department Of Electrical And Computer Engineering Faculty Of Engineering Kanazawa University
-
Zhang Qing
Department Of Applied Chemistry Saga University
-
Kumeda Minoru
Department of Electric and Electronic Engineering. Kanazawa University
-
KUMEDA Minoru
Department of Electronics Faculty of Technology, Kanazawa University
関連論文
- Influence of Buffer Layers on Lead Magnesium Niobate Titanate Thin Films Prepared by Pulsed Laser Ablation
- Effect of Oxygen Pressure on (Ba_xSr_)TiO_3 Thin Films by Pulsed Laser Ablation
- Fast and Slow Processes in Light-Induced Electron Spin Resonance in Hydrogenated Amorphous Si-N Films
- Proton Nuclear Magnetic Resonance Studies on Structural Changes Induced by Annealing of Hydrogenated Amorphous Silicon Films Prepared at High Deposition-Rate
- Mossbauer Time Spectra of the Nuclear Forward Scattering from Coherently Vibrating Resonant Nuclei
- Reduction of Interface Defect Density by Hydrogen Dilution in a-Si:H/ZnS Multilayer Films
- Identification of a New Defect in Silicon Nitride Films
- Thermal Equilibration of Defect Density in Hydrogenated Amorphous Silicon-Germanium Alloys
- Comparison between ESR and CPM for the Gap States in a-Si-Ge:H
- Temperature Simulation of Cooling Process of Ge Droplets in Laser Droplet Epitaxy(Surfaces, Interfaces, and Films)