ESR in Hydrogenated Amorphous Silicon
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概要
- 論文の詳細を見る
ESR measurements are performed for hydrogenated amorphous Si films prepared by reactive sputtering or glow discharge. Correlation between the ESR center density as a measure of dangling bonds, and the concentration of bonded hydrogen is investigated. Relations of the ESR center density with optical gap or electrical conductivity are also studied. The ESR center density decreases with increasing thermal relaxation and the total amount of bonded hydrogen irrespective of the ratio SiH_2/SiH. The optical gap widening is caused both by the presence of Si-H bonds and the disappearance of defects. These contributions can be separated from a relation between the optical gap and the spin density.
- 社団法人応用物理学会の論文
- 1980-04-05
著者
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SHIMIZU Tatsuo
Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University
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Kumeda Minoru
Department Of Electronics Faculty Of Technology Kanazawa University
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Kumeda Minoru
Department Of Electrical And Computer Engineering Faculty Of Engineering Kanazawa University
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Shimizu Tatsuo
Department Of Applied Physics University Of Tokyo
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Kumeda Minoru
Department of Electric and Electronic Engineering. Kanazawa University
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