NMR and ESR Studies on a-Si:H Prepared by Glow Discharge Decomposition of Si_2H_6
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概要
- 論文の詳細を見る
A hydrogen incorporation scheme and the density of defects are investigated by means of NMR and ESR for hydrogenated amorphous Si films prepared by glow discharge decomposition of disilane gas. Both the high rf power of decomposition and the high substrate temperature bring the films with a low density of defects, because in these films the content of dispersed hydrogen effective for relaxing the structural strain is large in spite of the small total hydrogen content.
- 社団法人応用物理学会の論文
- 1985-07-20
著者
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KOMATSU Hiroshi
Department of Cardiovascular Medicine, Hokkaido University Graduate School of Medicine
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SHIMIZU Tatsuo
Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University
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KUMEDA Minoru
Department of Electronics, Faculty of Technology, Kanazawa University
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Komatsu Hiroshi
Department Of Cardiovascular Medicine Hokkaido University Graduate School Of Medicine
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Fukuda Nobuhiro
Central Research Institute Mitsui Toatsu Chem Inc.
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Kumeda Minoru
Department Of Electrical And Computer Engineering Faculty Of Engineering Kanazawa University
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Kitagawa Nobuhisa
Electronic, Information and Energy Materials Develpment Division
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Kitagawa Nobuhisa
Electronic Information And Energy Materials Develpment Division
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Shimizu Tatsuo
Department Of Electronics Faculty Of Technology Kanazawa University
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Shimizu Tatsuo
Department Of Applied Physics University Of Tokyo
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Komatsu Hiroshi
Department Of Anesthesiology Hiraka General Hospital
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Komatsu Hiroshi
Department Of Electronics Faculty Of Technology Kanazawa University
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Kumeda Minoru
Department of Electric and Electronic Engineering. Kanazawa University
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