The Effects of H and F on the ESR Signals in a-Si
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概要
- 論文の詳細を見る
The effect of hyperfine interaction between a dangling bond and nearby H or F atoms in a-Si is calculated by using a simple molecular orbital method. The isotropic hyperfine structure constant of about 20 G or 43 G is obtained in the case of H or F attachment, respectively, at the nearest neighbor site to the Si atom with a dangling bond. It is considered, by comparing the calculated results with the observed ones, that dangling bonds are located avoiding H or F rich regions in a-Si.
- 社団法人応用物理学会の論文
- 1982-02-05
著者
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SHIMIZU Tatsuo
Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University
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KUMEDA Minoru
Department of Electronics, Faculty of Technology, Kanazawa University
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Ishii N
Central Research Laboratory Tokyo Electron Ltd.
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Ishii Nobuo
Corporate R&d Central Research Laboratory Tokyo Electron Ltd.
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Kumeda M
Kanazawa Univ. Kanazawa Jpn
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Kumeda Minoru
Department Of Electrical And Computer Engineering Faculty Of Engineering Kanazawa University
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ISHII Nobuhiko
Fukui High School
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Shimizu Tatsuo
Department Of Applied Physics University Of Tokyo
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Kumeda Minoru
Department of Electric and Electronic Engineering. Kanazawa University
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