SHIMIZU Tatsuo | Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University
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概要
- Shimizu Tatsuoの詳細を見る
- 同名の論文著者
- Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa Universityの論文著者
関連著者
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SHIMIZU Tatsuo
Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University
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Shimizu T
Chiba Univ. Chiba Jpn
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Kumeda Minoru
Department Of Electrical And Computer Engineering Faculty Of Engineering Kanazawa University
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MORIMOTO Akiharu
Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University
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KUMEDA Minoru
Department of Electronics, Faculty of Technology, Kanazawa University
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Kumeda M
Kanazawa Univ. Kanazawa Jpn
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Moto Akihiro
The Authors Are With The Research Center For Superconductor Photonics Osaka University
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Shimizu T
Department Of Electrical And Electronic Engineering Kanazawa University
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Shimizu Tadao
Department Of Physics University Of Tokyo
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Moto A
Department Of Electrical And Electronic Engineering Kanazawa University
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YONEZAWA Yasuto
Industrial Research Institute of Ishikawa (IRII)
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Shimizu T
Univ. Occupational And Environmental Health Jpn
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Shimizu T
Faculty Of Engineering Chiba University
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MINAMIKAWA Toshiharu
Industrial Research Institute of Ishikawa (IRII)
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Miura T
Environmental Health Sciences Division National Lnstitute For Environmental Studies:(present Address
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Watanabe Ichiro
Department of Cardiology, Nihon University School of Medicine
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Otsubo Shigeru
Department Of Electrical Engineering Ishikawa National College Of Tecchnology Tsubata
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Shimizu Tatsuo
Faculty Of Technology
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Minamikawa Toshiharu
Industrial Research Institute Of Ishikawa
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MASUDA Atsushi
Department of Pathology and Cell Regulation, Kyoto Prefectural University of Medicine
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MASUDA Atsushi
Japan Advanced Institute of Science and Technology
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Masuda A
Japan Advanced Institute Of Science And Technology
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Maeda Toshihiro
Department of Cardiology, Komatsushima Red Cross Hospital
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YAMADA Satoru
Department of Periodontology, Tokyo Dental College
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Yamada S
Electronic Imaging And Devices Research Laboratory Fuji Xerox
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Yamada So
Electronic Imaging And Devices Research Laboratory Fuji Xerox Co. Lid.
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Shimada M
Hiroshima Univ. Higashi‐hiroshima
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Ueda Shigenori
Department Of Material Physics Graduate School Of Engineering Science Osaka University
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YAMANAKA Yasuhiro
Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University
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Yamada Shoji
Shizuoka Institute Of Science And Technology
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KUMEDA Minoru
Laboratory for Development of Engineering Materials, Faculty of Technology, Kanazawa University
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UEDA SHOICHI
Department of Urology, Kumamoto University
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YAMADA Satoru
Research Center for Heavy Ion Medicine, Gunma University
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Ishii N
Central Research Laboratory Tokyo Electron Ltd.
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Ishii Nobuo
Corporate R&d Central Research Laboratory Tokyo Electron Ltd.
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ISHII Nobuhiko
Department o Electrical Engineertig, Fukui Institute of Technology
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Ueda K
Department Of Electrical And Computer Engineering Faculty Of Engineering Kanazawa University
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Ueda Shoichi
Department Of Electronics Faculty Of Technology Kanazawa University
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Yamada S
Research Center For Heavy Ion Medicine Gunma University
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Kumeda Minoru
Laboratory For Development Of Engineering Materials Faculty Of Engineering Kanazawa University
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Shimada M
Graduate School Of Natural Science And Technology Kanazawa University
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Maeda Toshihiro
Department Of Anatomy Of Shiga University Of Medical Science
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Yamada Satoru
Department Of Chemistry Graduate School Of Science Osaka University
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OHTSUBO Shigeru
Department of Medicine, Kidney Center, Tokyo Women's Medical University
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MIURA Takashi
Department of Cardiovascular Surgery, The Heart Institute of Japan, Tokyo Women's Medical University
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Yan H
Chinese Acad. Sci. Shanghai Chn
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Yan Hui
Department Of Pediatrics Peking University First Hospital
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Shimada M
Ntt Microsystem Integration Lab. Kanagawa Jpn
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NAKAZAWA Kenji
Department of Internal Medicine, Saiseikai Utsunomiya Hospital
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Yan Hui
Department Of Electronics Faculty Of Technology Kanazawa University
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MOTO Akihiro
Department of Electronics, Faculty of Technology, Kanazawa University
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Miura Takashi
Department Of Applied Chemistry Faculty Of Science And Technology Keio University
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Miura Takashi
Department Of Electronics Faculty Of Technology Kanazawa University
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MINAMIKAWA Toshiharu
Department of Electrical and Computer Engineering, Faculry of Engineering, Kanazawa University
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SEGAWA Kazuhito
Industrial Research Institute of Ishikawa
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Nakazawa Kenji
Department Of Electronics Faculty Of Technology Kanazawa University
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Yan Haixue
Shanghai Institute Of Ceramics Chinese Academy Of Sciences
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YONEZAWA Yasuto
Department of Electrical and Computer Engineering, Kanazawa University
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Zhou J‐h
Department Of Electrical And Computer Engineering Faculty Of Engineering Kanazawa University
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Segawa K
Osaka Electro‐communication Univ. Osaka Jpn
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OSAKA Yukio
Department of Electrical Engineering, Hiroshima University
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石田 謙司
神戸大学 大学院工学研究応用化学専攻
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石田 謙司
神戸大学
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MITANI Masahiro
Department of Radiology, Faculty of Medicine, Kagawa University
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Ishida Koichi
Optoelectronics Joint Research Laboratory:(present Address) Fundamental Research Laboratories Nec Co
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Ishida K
Optoelectronics Joint Research Laboratory
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Nakamura Takanori
Functional Materials Research Dept. R & D Div. Murata Manufacturing Co. Ltd.
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HASEGAWA Seiichi
Department of Electronics, Faculty of Technology, Kanazawa University
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Ishida K
Semiconductor System Engineering Center Toshiba Corporation
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Watanabe I
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kanazawa University
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Ishida Kohtaro
Department Of Physics Science University Of Tokyo
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Ishida K
Yamagata Univ. Yamagata Jpn
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石田 謙司
神戸大学工学部応用化学科:神戸大学大学院工学研究科応用化学専攻
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ZHANG Qing
Department of Nephrology, Yan Tai Yu Huang Ding Hospital, Qing Dao University School of Medicine
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NISHIBE Yuki
Department of Electrical and Electronic Engineering, Kanazawa University
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ISHIDA Katsuei
Taiyo Yuden Co., Ltd.
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MASAKI Yuichi
Taiyo Yuden Co., Ltd.
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Watanabe I
Sankyo Co. Ltd. Tokyo Jpn
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Nakamura T
Department Of Earth And Ocean Sciences National Defense Academy
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Ishida K
Taiyo Yuden Co. Ltd.
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SUZUKI Tenmin
Department of Electrical and Computer Engineering, Faculry of Engineering, Kanazawa University
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Chen Xinqi
Department Of Electronic Science And Engineering Kyoto University
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Osaka Yukio
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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Nishibe Yuki
Department Of Electrical And Electronic Engineering Kanazawa University
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Masaki Yuichi
Taiyo Yuden Co. Ltd.
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Kumeda Minoru
Department Of Electronics Faculty Of Technology Kanazawa University
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Niki Toshikazu
Ishikawa Seisakusho Ltd.
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OGAWA Toshio
Murata Manufacturing Co., Ltd.
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Nakayama Masatoshi
College Of General Education Kyushu University
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Shimada Masaki
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kanazawa University
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CHEN Xuekang
Department of Electric and Electronic Engineering. Kanazawa University
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Chen X
Department Of Electrical And Electronic Engineering Kanazawa University
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NISHIO Yutaka
Department of Physics, Faculty of Science, Toho University
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KOBAYASHI Isao
Department of Laboratory Medicine and Clinical Laboratory Center, Gunma University School of Medicin
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YODA Yoshitaka
CREST, Japan Science and Technology Agency
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MITSUI Takaya
Japan Atomic Energy Agency
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TAKEI Humihiko
Oxide Corporation
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Zhang Xiaowei
Photon Factory (pf) Institute Of Materials Structure Science High Energy Accelerator Research Organi
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Nishio Yutaka
Department Of Chemistry Faculty Of Science Toho University
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Nishio Yutaka
Department Of Electronics Faculty Of Technology Kanazawa University
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KOMATSU Hiroshi
Department of Cardiovascular Medicine, Hokkaido University Graduate School of Medicine
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SHIOMI Shigeru
Department of Physics Engineering, Faculty of Engineering, Mie University
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Takeda Mitsuo
Department Of Cardiology Kyoto First Red Cross Hospital
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Kitao Shinji
Research Reactor Institute Kyoto University
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Mitsui T
Crest Japan Science And Technology Agency:japan Atomic Energy Agency
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TAKAHASHI Yukio
Department of Applied and Environmental Chemistry, Kitami Institute of Technology
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KIKUTA Seishi
Department of Applied Physics, Faculty of Engineering, University of Tokyo
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Nakamura T
National Defense Acad. Kanagawa Jpn
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Ozawa Yoshiaki
Department Of Electronics Faculty Of Technology Kanazawa University
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YODA Yoshitaka
Department of Applied Physics, Faculty of Engineering, University of Tokyo
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TAKEI Humihiko
Institute for Solid State Physics, The University of Tokyo
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Kawado Seiji
Environment & Analysis Technology Department Technical Support Center Sony Corporation
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Ueda M
Tokyo Inst. Technol. Tokyo Jpn
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Ueda M
Univ. Tokushima Tokushima Jpn
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Ueda M
The Institute Of Scientific And Industrial Research Osaka University
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Kikuta Seishi
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
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Kikuta Seishi
Institute For Solid State Physics University Of Tokyo
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Yoda Y
Crest Japan Science And Technology Agency:japan Synchrotron Radiation Research Institute
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Yoda Y
Crest Japan Science And Technology Agency
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Yoda Yoshitaka
Japan Synchrotron Radiation Reserch Institute Sayou-gun
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Yoda Yoshitaka
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
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Kawasaki S
Lnstitute For Chemical Research Kyoto University
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HATTORI Shuzo
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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ZHANG Xianmin
Department of Information and Electronic Engineering, Zhejiang University
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SUGA KEN-ICHI
Department of Biotechnology, Faculty of Engineering, Osaka University
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NAKAMURA Takanori
Murata Manufacturing Co., Ltd.
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UEDA Masato
Department of Applied Chemistry, Faculty of Engineering, Osaka Institute of Technology
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SAITO Masaaki
Department of Neurology, Brain Research Institute, Niigata University
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Zhang Jin-yan
Department Of Electronics Faculty Of Technology Kanazawa University
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SUGIMOTO Ayumi
Department of Electronics, Faculty of Technology, Kanazawa University
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IMURA Takeshi
Department of Electrical Engineering, Osaka University
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CHAYAHARA Akiyoshi
Department of Electrical Engineering, Faculty of Engineering, Hiroshima University
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IMAI Yoshihiko
Department of Applied Physics, University of Tokyo
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ZHANG Xiao
National Laboratory for High Energy Physics
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HARAMI Taikan
Japan Atomic Energy Research Institute
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MATSUDA Kazuko
Department of Pediatrics, Sapporo Medical University School of Medicine
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Matsuda Kazuko
Faculty Of Engineering Kanazawa University
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Hattori T
Department Of Applied Physics Tokyo University Of Science
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Takei H
Tohoku Univ. Sendai Jpn
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Takei H
Osaka Univ. Toyonaka
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Takei Humihiko
Institute For Iron Steel And Other Metals Tohoku University
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Komatsu Hiroshi
Department Of Cardiovascular Medicine Hokkaido University Graduate School Of Medicine
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Suga Ken-ichi
Department Of Fermentation Technology Faculty Of Engineering Osaka University
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Suga Ken-ichi
Department Of Biological Science And Technology Science University Of Tokyo
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Nishino T
Mie Univ. Tsu Jpn
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Matsuda K
Univ. Cambridge Cambridge Gbr
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MAEHARA Takanori
Department of Digital Engineering.
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森本 朗裕
立命館大学 理工学部電子光情報工学科
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Kikuta Seishi
Department Of Applied Physics Faculty Of Engieering University Of Tokyo
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Okagawa Takatoshi
Department Of Electrical And Computer Engineering Faculty Of Technology Kanazawa University
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Noguchi Shigeru
Department Of Electronics Faculty Of Technology Kanazawa University
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Awaki Narimasa
Department of Electronics, Faculty of Technology, Kanazawa University
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Watanabe Takeshi
Central Research Laboratory, Hitachi,Ltd.
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Fukuda Nobuhiro
Central Research Institute Mitsui Toatsu Chem Inc.
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SAIZAKI Masato
Department of Electrical and Electronic Engineering, Kanazawa University
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KITAJIMA Hiromichi
Department of Electrical and Electronic Engineering, Kanazawa University
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Yoshida Toshiomi
Department Of Fermentation Technology Faculty Of Engineering Osaka University
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Chayahara Akiyoshi
Department Of Electrical Engineering Hiroshima University
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Kimura Susumu
Graduate School Of Natural Science And Technology Kanazawa University
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Takeda Mitsuo
Department Of Electrical And Computer Engineering Faculty Of Engineering Kanazawa University
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Suzuki T
Process & Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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Saito Masaaki
Department Of Electronics Faculty Of Technology Kanazawa University
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Matsuda K
Waseda Univ. Tokyo Jpn
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Matsuda Kazuko
Department Of Pediatrics Sapporo Medical University School Of Medicine
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Itoh K
Jichi Medical School Tochigi Jpn
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ICHIKAWA KUNISUKE
Department of Fermentation Technology, Faculty of Engineering, Osaka University
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Kaito Shinji
Research Reactor Institute Kyoto University
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Kumeda Minoru
Laboratory For Development Of Engineering Materials Faculty Of Technology Kanazawa University
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Imura T
Mitsubishi Paper Mills Ltd.
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Imura T
Department Of Electrical Engineering Hiroshima University
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Imura Takeshi
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Hattori Shuzo
Department Of Physics Kanazawa University
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Saizaki Masato
Department Of Electrical And Electronic Engineering Kanazawa University
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Sugimoto Ayumi
Department Of Electronics Faculty Of Technology Kanazawa University
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Imai Yoshihiko
Department Of Applied Physics University Of Tokyo
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Shimizu Tatsuo
Department Of Fermentation Technology Faculty Of Engineering Osaka University:(present Address)depar
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TAGUCHI HISAHARU
Department of Fermentation Technology, Faculty of Engineering, Osaka University
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Kikuta S
Univ. Tokyo Tokyo
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TSUJIMURA Yoshinori
Department of Laboratory Medicine and Third Department of Internal Medicine, Kyoto Prefectural Unive
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DURNY Rudolf
Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University
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Takei H
Institute For Iron Steel And Other Metals Tohoku University
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SENDA Kantaro
Department of Physics, Kanazawa University
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Senda Kantaro
Department Of Physics Kanazawa University
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Tsujimura Yoshinori
Department Of Electronics Faculty Of Technology Kanazawa University
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Yoda Y.
Crest Japan Science And Technology Agency
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SHIMADA Masaki
Graduate School of Natural Science and Technology, Kanazawa University
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NAGAI Katsuro
Department of Electrical and Electronic Engineering, Kanazawa University
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SHIMADA Masaki
Greduate School of Natural Science and Technology, Kanazawa University
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SUGIYAMA Hidekazu
Department of Electrical and Electronic Engineering, Kanazawa University
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OGURI Shinya
Department of Electrical and Computer Engineering, Kanazawa University
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KATA Kazuhiro
Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University
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MIN Hoonkee
Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University
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Teramoto Shito
Department of Fermentation Technology, Faculty of Engineering, Osaka University
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Shiomi Shigeru
Department Of Electrical Engineering Faculty Of Engineering Nagoya University
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Shiomi Shigeru
Department Of Electronics Faculty Of Technology Kanazawa University
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MORIMOTO Akiharu
Graduate School of Natural Science and Technology, Kanazawa University
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Kata Kazuhiro
Department Of Electrical And Computer Engineering Faculty Of Engineering Kanazawa University
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MASUDA Akio
Department of Industrial Chemistry, Faculty of Technology, Tokyo Metropolitan University
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Awaki Narimasa
Department Of Electronics Faculty Of Technology Kanazawa University
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Kitajima Hiromichi
Department Of Electrical And Electronic Engineering Kanazawa University
著作論文
- Influence of Buffer Layers on Lead Magnesium Niobate Titanate Thin Films Prepared by Pulsed Laser Ablation
- Effect of Oxygen Pressure on (Ba_xSr_)TiO_3 Thin Films by Pulsed Laser Ablation
- Fast and Slow Processes in Light-Induced Electron Spin Resonance in Hydrogenated Amorphous Si-N Films
- Proton Nuclear Magnetic Resonance Studies on Structural Changes Induced by Annealing of Hydrogenated Amorphous Silicon Films Prepared at High Deposition-Rate
- Mossbauer Time Spectra of the Nuclear Forward Scattering from Coherently Vibrating Resonant Nuclei
- Reduction of Interface Defect Density by Hydrogen Dilution in a-Si:H/ZnS Multilayer Films
- Identification of a New Defect in Silicon Nitride Films
- Thermal Equilibration of Defect Density in Hydrogenated Amorphous Silicon-Germanium Alloys
- Comparison between ESR and CPM for the Gap States in a-Si-Ge:H
- Temperature Simulation of Cooling Process of Ge Droplets in Laser Droplet Epitaxy(Surfaces, Interfaces, and Films)
- Preparation of Twin- and Crack-Free LiNbO_3 Films by Pulsed Laser Ablation Using Nucleation Process at High Temperature : Surfaces, Interfaces, and Films
- Rotational Honeycomb Epitaxy of Ru Thin Films on Sapphire (0001) Substrate : Surfaces, Interfaces, and Films
- Preparation of Pb(Zn_Ti_)O_3 Films by Laser Ablation
- Thermal Analysis of Target Surface in the Ba-Y-Cu-O Film Preparation by Laser Ablation Method
- Preparation of Ba-Y-Cu-O Superconducting Films by Laser Ablation with and without Laser Irradiation on Growing Surface : Special Section : Solid State Devices and Materials 2 : Thin Film Devices and Superconductors
- a-Si_O_x:H Films Prepared by Direct Photo-CVD Using CO_2 Gas : Condensed Matter
- Preparation of Ba_2YCu_3O_x Superconducting Films by Laser Evaporation and Rapid Laser Annealing : Electrical Properties of Condensed Matter
- Mechanism of Stoichiometric Deposition of Volatile Elements in Multimetal-Oxide Films Prepared by Pulsed Laser Ablation
- Annealing Temperature Dependence of MgO Substrates on the Quality of YBa_2Cu_3O_x Films Prepared by Pulsed Laser Ablation
- Influence of Sub-Gap Illumination on Light-Induced ESR in Undoped a-Si:H
- Temperature-Independent Photoluminescence in Amorphous Si_C_x:(F,H) Films with Low Defect Density
- Glow Discharge a-Si_C_x: H Films Studied by ESR and IR Measurements
- ESR and IR Studies on a-Si_Ge_x: H Prepared by Glow Discharge Decomposition
- Properties of Hydrogenated Amorphous Si-N Prepared by Various Methods
- Thin Film Patterning by Laser Lift-Off
- Comparative Study of Defect Densities Evaluated by Electron Spin Resonance and Constant Photocurrent Method in Undoped and N-Doped Hydrogenated Amorphous Silicon
- Electron-Beam-Induced Nucleation Centers and Selective Deposition of Thin Zinc Films
- Photocreated Defects in Very Thin Hydrogenated Amorphous Silicon Films : Semiconductors
- Partial Recovery of Photodegradation at Room Temperature in Hydrogenated Amorphous Silicon
- Relation between Electron-Spin-Resonance and Constant-Photocurrent-Method Defect Densities in Hydrogenated Amorphous Silicon
- Preparation of Epitaxial Ge Film on Si by Pulsed Laser Ablation Using Molten Droplets
- Change of Spin-Lattice Relaxation Time with Light Soaking for Defects in Hydrogenated Amorphous Silicon
- Removal of Surface Oxides on Copper by Pulsed Laser lrradiation
- Relation between ESR and Hydrogen in Magnetron-Sputtered a-Ge:H
- Studies on Submerged Culture of Basidiomycetes : (III) The Oxygen Transfer within the Pellets of Lentinus edodes
- Light-Intensity Dependence of Photocreated Defects in Hydrogenated Amorphous Silicon-Nitrogen Alloy Films
- Effects of Transition Metal Additives on Electronic Properties in Amorphous GeSeTe Films
- Hydrogen Incorporation Scheme in Amorphous-Microcrystalline Mixed-Phase Si: H Films
- Role of Hydrogen and Fluorine in Amorphous Silicon as Elucidated by NMR and ESR
- NMR and IR Studies on Hydrogenated Amorphous Si_C_x Films
- Magneto-Optical Characteristics of Bi-Substituted Rare-Earth Iron Garnet Films Prepared by Laser Ablation
- Preparation of Pb(Zr, Ti)O_3 Films on Si Substrate by Laser Ablation
- Influence of Laser Fluence on Structural and Ferroelectric Properties of Lead-Zirconate-Titanate Thin Films Prepared by Laser Ablation : Thin Films
- Annealing Studies on Hydrogenated Amorphous Silicon-Tin Films
- ESR and Raman Studies on Hydrogenated Amorphous Si-Sn
- Activated Sludge Process using a Multistage Tower Aeration Tank
- Influence of Hydrogen Content and Si-H Bond Structure on Photocreated Dangling Bonds in Hydrogenated Amorphous Silicon Films
- Light-Induced ESR in Variously Treated Hydrogenated Amorphous Silicon
- Relationship between Electrical Conductivity and Charged-Dangling-Bond Density in Nitrogen- and Phosphorus-Doped Hydrogenated Amorphous Silicon
- Light-Induced-ESR Study of Undoped and N-Doped Hydrogenated Amorphous Silicon
- Spectroscopic Study on N_O-Plasrma Oxidation of Hydrogenated Amorphous Silicon and Behavior of Nitrogen
- Light Soaking of a-Si:H at 77 K
- Contribution of Floating Bonds to Photocreation of Defects in a-Si:H
- Structure of Films Prepared by Glow Discharge Decomposition of Hexafluorodisilane
- Hydrogen Incorporation Scheme in a-Si_C_x:H
- Rate Equations for the Creation of Various Metastable Dangling Bonds in a-Si:H Mediated by Floating Bonds
- Properties of Amorphous Si Prepared by RF Sputtering with a High Ar Pressure
- Influence of Oxygen and Deposition Conditions on RF-Sputtered Amorphous Si Films
- Structural Studies on Hydrogenated Amorphous Germanium-Carbon Films Prepared by RF Sputtering
- NMR and ESR Studies on a-Si:H Prepared by Glow Discharge Decomposition of Si_2H_6
- ESR Study on Silica Exposed to Glow-Discharge Plasma and UV Light
- A Model for the Staebler-Wronski Effect Based on Charged Impurities
- The Effects of H and F on the ESR Signals in a-Si
- The g-Values of Defects in Amorphous C, Si and Ge
- Effect of Charged Defects on Properties of Amorphous Si-Based Alloys
- ESR Studies on the Light-Induced Effect in Si-Based Amorphous Semiconductors
- Reduction of Droplet Formatiom by Reducing Target Etching Rate in Pulsed Laser Ablation
- Laser-Irradiation Induced a-Axis Orientation in c-Axis-Oriented YBa_2Cu_3O_x Films Prepared by Pulsed Laser Ablation
- ESR and X-Ray Diffraction Studies on Ba-Y-Cu-O Superconductors : Electrical Properties of Condensed Matter
- Preparation of Ti-Al-N Electrode Films by Pulsed Laser Ablation for Lead-Zirconate-Titanate Film Capacitors
- Highty Oriented Pb(Zr, Ti)O_3 Thin Films Prepared by Pulsed Laser Ablation GaAs and Si Substrates with MgO Buffer Layer
- Fatigue Behavior in Lead-Zirconate-Titanate Thin-Film Capacitors Prepared by Pulsed Laser Ablation on Ni-Alloy Electrodes
- NH_3-Plasma-Nitridation Process of (100) GaAs Surface Observed by Angle-Dependent X-Ray Photoelectron Spectroscopy
- Effective Electron Correlation Energy in Amorphous Ge-S
- Relationship between Photodarkening and Light-Induced ESR in Amorphous Ge-S Films Alloyed with Lead
- Nuclear Spin-Spin Coupling between Protons in Vinyl Derivatives
- Light-Induced Effects and Their Annealing Behavior in a-Si:H
- Photo-Induced ESR in Amorphous Si_N_x:H Films
- Spin-Lattice Relaxation of Shallow Acceptors in Strained Silicon
- Effect of Reduction in Impurity Content for a-Si:H Films
- ESR and Constant Photocurrent Studies of Surface and Bulk Defects in a-Si:H
- Hydrogen Evolution from Amorphous Si-N Films
- Light-Induced Effects in a-Si:H Studied by ESR and Electrical Measurements
- Evidence of the Existence of SiF_4 Molecules in Fluorinated Amorphous Silicon
- Stepwise Change of Electrical and Thermodynamical Properties of (As_Te_)_Ge_x Glass with x
- Photoluminescence in Glow Discharge Deposited Amorphous Si_C_x: H Films
- Electron Spin Resonance of Conduction Electrons in Phosphorus Ion-Implanted Silicon
- ESR Studies on P^+ Ion-Implanted Si
- On the Narrow Lorentzian ESR Signal in Ge-S Glasses
- Effect of Sb Incorporation in Ge-S Glasses
- Plasma-Hydrogenation Effects in Doped CVD Amorphous Silicon Films
- Influence of Various Dopants on Electrical and Optical Properties of Amorphous Ge_S_
- Effect of Impurities on ESR Spectrum in Ge-S Glass
- Electronic-structure calculations for BC radical by density-functional theory
- Structural Analysis on T_c Variation of Bi_2Sr_Ca_Cu_2O_
- Current Transport in Doped Polycrystalline Silicon
- Electronic States for Threefold- and Fivefold-Coordinated Si Atoms in Amorphous Si : Condensed Matter
- Factors Affecting Sludge Culking in the Activated Sludge Process
- ESR in Hydrogenated Amorphous Silicon
- Spin-Lattice Relaxation of Shallow Acceptors in Strained Silicon