Hydrogen Incorporation Scheme in a-Si_<1-x>C_x:H
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概要
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A hydrogen incorporation scheme is investigated in a-Si_<1-x>C_x:H using NMR and is compared with the density of dangling bonds. The network of a-Si_<1-x>C_x:H with x<0.2 is classified into two phases with dispersed and clustered H atoms, as is well known in a-Si:H. The total H content increases with increasing x up to 〜0.2, but the dispersed H atom content decreases accompanied by an increase in the density of dangling bonds. With x>0.2, the average separation between dispersed H atoms becomes closer and an H-poor region with a high density of dangling bonds arises,
- 社団法人応用物理学会の論文
- 1987-11-20
著者
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SHIMIZU Tatsuo
Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University
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KUMEDA Minoru
Department of Electronics, Faculty of Technology, Kanazawa University
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Kumeda Minoru
Department Of Electrical And Computer Engineering Faculty Of Engineering Kanazawa University
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NAKANISHI Satoko
Department of Electronics, Faculty of Technology, Kanazawa University
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Shimizu Tatsuo
Department Of Applied Physics University Of Tokyo
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Nakanishi Satoko
Department Of Electronics Faculty Of Technology Kanazawa University
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