Light-Induced Effects and Their Annealing Behavior in a-Si:H
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概要
- 論文の詳細を見る
It is found from ESR measurements in a-Si:H films that dangling bonds created by short-time illumination can be removed by short-time annealing and that photo-created dangling bonds removed by short-time annealing can be recovered by short-time illumination. Combining these results with temperature dependence of illumination effects for two kinds of films prepared at 100℃ and 250℃, a mechanism of the photo-creation of dangling bonds is proposed. The illumination effect on photoconductivity and photoluminescence is also compared with that on ESR.
- 社団法人応用物理学会の論文
- 1986-08-20
著者
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MORIMOTO Akiharu
Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University
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SHIMIZU Tatsuo
Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University
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Kumeda M
Kanazawa Univ. Kanazawa Jpn
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Kumeda Minoru
Department Of Electrical And Computer Engineering Faculty Of Engineering Kanazawa University
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Shimizu T
Chiba Univ. Chiba Jpn
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Moto Akihiro
The Authors Are With The Research Center For Superconductor Photonics Osaka University
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Yokomichi H
Toyama Prefectural Univ.
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Yokomichi Haruo
Department Of Electronics And Informatics Toyama Prefectural University
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Shimizu Tatsuo
Department Of Applied Physics University Of Tokyo
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Morimoto Akiharu
Department of Electrical and Computer Engineering, Faculty of Engineering,
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Kumeda Minoru
Department of Electric and Electronic Engineering. Kanazawa University
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