Current Transport in Doped Polycrystalline Silicon
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概要
- 論文の詳細を見る
DC conductivity, photoconductivity, magnetoresistance, and ESR of polycrystalline silicon films have been measured as functions of doping and temperature. Native defect states of about 10^<18>cm^<-3> distributed mainly in the grain boundary region are reduced with phosphorus doping and completely eliminated at doping ratios above 4×10^<-5>. This defect compensation by dopant atoms results in a decrease of local band bending in the grain boundary as confirmed from the analysis of photoconductivity. A rapid decrease in resistivity occurs around a doping ratio of 3×10^<-5> at which the density of doped phosphorus atoms starts to approach the native defect density. Carrier transport in doped polycrystalline silicon is found to be well understood in terms of a potential fluctuation model describing the electronic density of state distribution in the energy gap.
- 社団法人応用物理学会の論文
- 1980-04-05
著者
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OSAKA Yukio
Department of Electrical Engineering, Hiroshima University
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SHIMIZU Tatsuo
Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University
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Osaka Yukio
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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Hasegawa Seiichi
Department Of Electronics Faculty Of Technology Kanazawa University
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Hirose Masataka
Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer
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Taniguchi Mitsuhiro
Department Of Electrical Engineering Hiroshima University
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Shimizu Tatsuo
Department Of Applied Physics University Of Tokyo
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Shimizu Tatsuo
Department Of Electronics Kanazawa University
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Hasegawa Seiichi
Department Of Electrical And Computer Engineering Faculty Of Technology Kanazawa University
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Hasegawa Seiichi
Department Of Electronics Kanazawa University
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Hirose Masataka
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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