Effect of Charged Defects on Properties of Amorphous Si-Based Alloys
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概要
- 論文の詳細を見る
Effects of both neutral and charged defects on optoelectronic properties have been investigated in a-Si:H, Si_<1-x> C_x:H, Si_<1-x>N_x:H and Si_<1-x>O_x:H films by separating both kinds of defects. The increase in the density of neutral defects decreases the photoconductivity because they work as a recombination center for optically excited electrons in the conduction band. On the other hand, the increase in the density of charged defects increases the decay time of the photocurrent after the light-off because they work as a trapping center for the electrons.
- 社団法人応用物理学会の論文
- 1990-09-20
著者
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MORIMOTO Akiharu
Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University
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SHIMIZU Tatsuo
Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University
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KUMEDA Minoru
Department of Electronics, Faculty of Technology, Kanazawa University
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Kumeda M
Kanazawa Univ. Kanazawa Jpn
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Kumeda Minoru
Department Of Electrical And Computer Engineering Faculty Of Engineering Kanazawa University
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Shimizu T
Chiba Univ. Chiba Jpn
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Moto Akihiro
The Authors Are With The Research Center For Superconductor Photonics Osaka University
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Yoshita Masahiro
Department Of Electronics Faculty Of Technology Kanazawa University
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Shimizu Tatsuo
Department Of Applied Physics University Of Tokyo
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Morimoto Akiharu
Department of Electrical and Computer Engineering, Faculty of Engineering,
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Kumeda Minoru
Department of Electric and Electronic Engineering. Kanazawa University
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