Structural and Electrical Characterization of Oxidated, Nitridated and Oxi-nitridated (100) GaAs Surfaces
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-07-15
著者
-
Iiyama K
Graduate School Of Natural Science And Technology Kanazawa University
-
YONEZAWA Yasuto
Industrial Research Institute of Ishikawa (IRII)
-
Inokuma Takao
Graduate School Of Natural Science And Technology Kanazawa University
-
Inokuma Takao
Department Of Electronics Kanazawa University
-
IIYAMA Koichi
Graduate School of Natural Science and Technology, Kanazawa University
-
TAKAMIYA Saburo
Graduate School of Natural Science and Technology, Kanazawa University
-
PAUL Narayan
Graduate School of Natural Science and Technology, Kanazawa University
-
NAKAMURA Kazuki
Graduate School of Natural Science and Technology, Kanazawa University
-
TAKEBE Masahide
Graduate School of Natural Science and Technology, Kanazawa University
-
TAKEMOTO Akira
Graduate School of Natural Science and Technology, Kanazawa University
-
HIGASHIMINE Koichi
Japan Advanced Institute of Science and Technology
-
OHTSUKA Nobuo
Japan Advanced Institute of Science and Technology
-
Takamiya S
Graduate School Of Natural Science And Technology Kanazawa University
関連論文
- Effect of Laser Phase-Induced Intensity Noise on Multiplexed Fiber-Optic Sensor System Using Optical Loop with Frequency Shifter
- Preparation of Low-Stress SiN_x Films by Catalytic Chemical Vapor Deposition at Low Temperatures
- Improvement of Deposition Rate by Sandblasting of Tungsten Wire in Catalytic Chemical Vapor Deposition
- Moisture-Resistive Properties of SiN_x Films Prepared by Catalytic Chemical Vapor Deposition below 100℃ for Flexible Organic Light-Emitting Diode Displays
- Effect of Atomic Hydrogen on Preparation of Highly Moisture-Resistive SiN_x Films at Low Substrate Temperatures
- Highly Moisture-Resistive SiN_x Films Prepared by Catalytic Chemical Vapor Deposition
- Annealing Effect of Pb(Zr, Ti)O_3 Ferroelectric Capacitor in Active Ammonia Gas Cracked by Catalytic Chemical Vapor Deposition System
- Mechanical Stress Caused by Adsorption of O or N on Ga-terminated (100) GaAs Surface and InAl-terminated (100) InAlAs Surface : Degradation of Insulator/Semiconductor Interface
- Studies of Effects of Adsorption of Silicon or Germanium on the Electronic States of (100) GaAs Surfaces
- Oxygen and Sulfur Adsorption Effects on Electronic States of GaAs(100) Surfaces Studied with Discrete Variational Xα Method
- Structural and Electrical Characterization of Oxidated, Nitridated and Oxi-nitridated (100) GaAs Surfaces
- Properties of "Stoichiometric" Silicon Oxynitride Films
- Structural Properties of Ultrathin Amorphous Silicon Oxynitride Layers
- Effects of Plasma-Pretreatment on Substrates before Deposition of Polycrystalline Silicon Films(Surfaces, Interfaces, and Films)
- Structural and Optical Properties of Nanocrystalline Silicon Films Deposited by Plasma-Enhanced Chemical Vapor Deposition(Optical Properties of Condensed Matter)
- Influence of Organic Contamination on Silicon Dioxide Integrity
- Effects of Addition of SiF_4 During Growth of Nanocrystalline Silicon Films Deposited at 100℃ by Plasma-Enhanced Chemical Vapor Deposition
- Temperature Effects on the Structure of Polycrystalline Silicon Films by Glow-Discharge Decomposition Using SiH_4/SiF_4
- Effects of Nitrogen Addition to Fluorinated Silicon Dioxide Films
- Initial Growth of Polycrystalline Silicon Films on Substrates Subjected to Different Plasma Treatments
- Effects of the Addition of SiF_4 to the SiH_4 Feed Gas for Depositing Polycrystalline Silicon Films at Low Temperature
- Stress in Amorphous SiO_x:H Films Prepared by Plasma-Enhanced Chemical Vapor Deposition
- Properties of "Stoichiometric" Silicon Oxynitride Films
- Effects of Deposition Temperature on Strain in Polycrystalline SiC Films Deposited by Radio-Frequency Glow Discharge
- Two Levels of Ni/n-GaAs Schottky Barrier Heights Formed on a Wafer by Controlling pH of Pretreatment Chemicals : Effect of Oxygen Adsorption
- Pressure Effects on CdS Microcrystals Embedded in Germanate Glasses
- Raman Scattering of Amorphous Semiconductors Ge-S System under High Hydrostatic Pressure
- Effect of Oxidation using Ultraviolet Light and Ozone and Subsequent Nitridation using Electron Cyclotron Resonance Plasma on Gate Portion of GaAs Field-Effect Transistors
- Effect of Oxidation using Ultraviolet Light and Ozone and Subsequent Nitridation using Electron Cyclotron Resonance Plasma on Gate Portion of GaAS Field-Effect Transistors
- Oxidation of InAlAs and Its Application to Gate Insulator of InAlAs/InGaAs Metal Oxide Semiconductor High Electron Mobility Transistor
- Equivalent Circuit Model of InAlAs/InGaAs/InP Heterostructure Metal-Semiconductor-Metal Photodetectors(Lasers, Quantum Electronics)
- Temperature Simulation of Cooling Process of Ge Droplets in Laser Droplet Epitaxy(Surfaces, Interfaces, and Films)
- Preparation of Twin- and Crack-Free LiNbO_3 Films by Pulsed Laser Ablation Using Nucleation Process at High Temperature : Surfaces, Interfaces, and Films
- Preparation of Pb(Zn_Ti_)O_3 Films by Laser Ablation
- Thermal Analysis of Target Surface in the Ba-Y-Cu-O Film Preparation by Laser Ablation Method
- Preparation of Ba-Y-Cu-O Superconducting Films by Laser Ablation with and without Laser Irradiation on Growing Surface : Special Section : Solid State Devices and Materials 2 : Thin Film Devices and Superconductors
- Preparation of Ba_2YCu_3O_x Superconducting Films by Laser Evaporation and Rapid Laser Annealing : Electrical Properties of Condensed Matter
- Application of Brightness of Scanning Electron Microscope Images to Measuring Thickness of Nanometer-Thin SiO_2 Layers on Si Substrates : Semiconductors
- I-V Characteristics of Schottky/Metal-Insulator-Semiconductor Diodes with Tunnel Thin Barriers
- Mechanism of Stoichiometric Deposition of Volatile Elements in Multimetal-Oxide Films Prepared by Pulsed Laser Ablation
- Annealing Temperature Dependence of MgO Substrates on the Quality of YBa_2Cu_3O_x Films Prepared by Pulsed Laser Ablation
- Phase-Decorrelated FMCW Reflectometry for Long Optical Fiber Characterization by Using a Laser Diode with Modulated External-Cavity (Special Issue on Optical Fiber Sensors)
- Preparation of Epitaxial Ge Film on Si by Pulsed Laser Ablation Using Molten Droplets
- Fabrication and Magnetic Properties of MnO-MoO_ Composite Thin Films (Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Annealing Effects on Cathodoluminescence Properties of SiOx Films Deposited by Radio Frequency Sputtering
- Spectroscopic Study on N_O-Plasrma Oxidation of Hydrogenated Amorphous Silicon and Behavior of Nitrogen
- Experimental Study of Lasing Characteristics of Brillouin/Erbium Optical Fiber Laser(Optoelectronics)
- Reduction of Droplet Formatiom by Reducing Target Etching Rate in Pulsed Laser Ablation
- Highty Oriented Pb(Zr, Ti)O_3 Thin Films Prepared by Pulsed Laser Ablation GaAs and Si Substrates with MgO Buffer Layer
- NH_3-Plasma-Nitridation Process of (100) GaAs Surface Observed by Angle-Dependent X-Ray Photoelectron Spectroscopy
- Formation of Step-Free Surfaces on Diamond (111) Mesas by Homoepitaxial Lateral Growth
- GaAs Metal Insulator Semiconductor Field Effect Transistor with Oxi-Nitrided Gate Film Formed by New Process Utilizing Al Layer as Resist Film for Selective Etching, Oxi-Nitridation and Lift-Off
- Structural and Electrical Characterization of Oxidated, Nitridated and Oxi-nitridated (100) GaAs Surfaces
- Studies of Effects of Adsorption of Silicon or Germanium on the Electronic States of (100) GaAs Surfaces
- Oxygen and Sulfur Adsorption Effects on Electronic States of GaAs(100) Surfaces Studied with Discrete Variational $X\alpha$ Method
- Mechanical Stress Caused by Adsorption of O or N on Ga-terminated (100) GaAs Surface and InAl-terminated (100) InAlAs Surface: Degradation of Insulator/Semiconductor Interface
- Formation of Graphene-on-Diamond Structure by Graphitization of Atomically Flat Diamond (111) Surface
- Formation of Graphene-on-Diamond Structure by Graphitization of Atomically Flat Diamond (111) Surface (SELECTED TOPICS IN APPLIED PHYSICS : Nano Electronics and Devices : Characterization and Control of Nano Surfaces and Interfaces)