Two Levels of Ni/n-GaAs Schottky Barrier Heights Formed on a Wafer by Controlling pH of Pretreatment Chemicals : Effect of Oxygen Adsorption
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-10-15
著者
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Iiyama K
Graduate School Of Natural Science And Technology Kanazawa University
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Inokuma Takao
Gradiate School Of Natural Science And Technology Kanazawa University
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TAKAMIYA Saburo
Graduate School of Natural Science and Technology, Kanazawa University
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TSUZUKU Tatsutoshi
Graduate School of Natural Science and Technology, Kanazawa University
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SUGIMURA Tomoyuki
Gradiate School of Natural Science and Technology, Kanazawa University
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KASAI Yuuki
Gradiate School of Natural Science and Technology, Kanazawa University
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IIYAMA Kouichi
Gradiate School of Natural Science and Technology, Kanazawa University
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TAKAMIYA Saburo
Gradiate School of Natural Science and Technology, Kanazawa University
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Kasai Yuhki
Graduate School Of Natural Science And Technology Kanazawa University
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Kita Yoshiaki
Hitachi Research Laboratory Hitachi Ltd.
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Kasai Yuuki
Graduate School Of Natural Science And Technology Kanazawa University
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Sugimura Tomoyuki
Gradiate School Of Natural Science And Technology Kanazawa University
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Tsuzuku Tatsutoshi
Graduate School Of Natural Science And Technology Kanazawa University
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Takamiya S
Graduate School Of Natural Science And Technology Kanazawa University
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Takamiya S
Kanazawa Univ. Ishikawa Jpn
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Takamiya Saburo
The Department Of Electrical And Computer Engineering Faculty Of Engineering Kanazawa University
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Kita Yutaro
Graduate School Of Natural Science And Technology Kanazawa University
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