Oxidation of InAlAs and Its Application to Gate Insulator of InAlAs/InGaAs Metal Oxide Semiconductor High Electron Mobility Transistor
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-03-15
著者
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Iiyama K
Graduate School Of Natural Science And Technology Kanazawa University
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SETO Hiroki
Graduate School of Natural Science and Technology, Kanazawa University
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IIYAMA Koichi
Graduate School of Natural Science and Technology, Kanazawa University
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TAKAMIYA Saburo
Graduate School of Natural Science and Technology, Kanazawa University
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PAUL Narayan
Graduate School of Natural Science and Technology, Kanazawa University
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NAKAMURA Kazuki
Graduate School of Natural Science and Technology, Kanazawa University
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Seto Hiroki
Graduate School Of Natural Science And Technology Kanazawa University
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Nakamura Kazuki
Graduate School Of Natural Science And Technology Kanazawa University
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Paul Narayan
Graduate School Of Natural Science And Technology Kanazawa University
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Takamiya S
Graduate School Of Natural Science And Technology Kanazawa University
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Takamiya S
Kanazawa Univ. Ishikawa Jpn
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Takamiya Saburo
The Department Of Electrical And Computer Engineering Faculty Of Engineering Kanazawa University
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Takamiya Saburo
Graduate School Of Natural Science And Technology Division Of Electrical Engineering And Computer Sc
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Iiyama Koichi
Graduate School Of Natural Science And Technology Division Of Electrical Engineering And Computer Sc
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Iiyama Koichi
Graduate School Of Natural Science And Technology Kanazawa University
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Nakamura Kazuki
Graduate School Of Advanced Integration Science Chiba University
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- Oxygen and Sulfur Adsorption Effects on Electronic States of GaAs(100) Surfaces Studied with Discrete Variational $X\alpha$ Method
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