Iiyama Koichi | Graduate School Of Natural Science And Technology Division Of Electrical Engineering And Computer Sc

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著作論文

Oxidation of InAlAs and Its Application to Gate Insulator of InAlAs/InGaAs Metal Oxide Semiconductor High Electron Mobility Transistor
Experimental Study of Lasing Characteristics of Brillouin/Erbium Optical Fiber Laser(Optoelectronics)
GaAs Metal Insulator Semiconductor Field Effect Transistor with Oxi-Nitrided Gate Film Formed by New Process Utilizing Al Layer as Resist Film for Selective Etching, Oxi-Nitridation and Lift-Off
Effect of Oxidation using Ultraviolet Light and Ozone and Subsequent Nitridation using Electron Cyclotron Resonance Plasma on Gate Portion of GaAs Field-Effect Transistors
Structural and Electrical Characterization of Oxidated, Nitridated and Oxi-nitridated (100) GaAs Surfaces
Studies of Effects of Adsorption of Silicon or Germanium on the Electronic States of (100) GaAs Surfaces
Oxygen and Sulfur Adsorption Effects on Electronic States of GaAs(100) Surfaces Studied with Discrete Variational $X\alpha$ Method
Mechanical Stress Caused by Adsorption of O or N on Ga-terminated (100) GaAs Surface and InAl-terminated (100) InAlAs Surface: Degradation of Insulator/Semiconductor Interface

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