Structural and Electrical Characterization of Oxidated, Nitridated and Oxi-nitridated (100) GaAs Surfaces
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概要
- 論文の詳細を見る
Oxidation by the UV & ozone process, nitridation by the nitrogen helicon-wave-excited plasma process, and the combination of these processes are applied to (100) GaAs wafers. An atomic force microscope, X-ray photoelectron spectroscopy, a transmission electron microscope, photoluminescence and electrical characteristics (current–voltage and capacitance–voltage) were used to analyze the influences of these processes on the structure and composition of the surfaces and the interfaces. Metal–insulator–semiconductor (MIS) diodes and Schottky diodes were fabricated in order to investigate the electrical influences of these processes. The oxidation slightly disorders GaAs surfaces. Nitridation of a bare surface creates about a 2-nm-thick strongly disordered layer, which strongly deteriorates the electrical and photoluminescence characteristics. Nitridation of oxidated wafers (oxi-nitridation) forms firm amorphous GaON layers, which contain GaN, with very flat and sharp GaON/GaAs interfaces, where crystal disorder is hardly observed. It improves the current–voltage ($I$–$V$) and capacitance–voltage ($C$–$V$) characteristics and the photoluminescence intensity. Results of the structural and the electrical characterizations qualitatively coincide well with each other.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-07-15
著者
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Inokuma Takao
Graduate School Of Natural Science And Technology Kanazawa University
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TAKEBE Masahide
Graduate School of Natural Science and Technology, Kanazawa University
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HIGASHIMINE Koichi
Japan Advanced Institute of Science and Technology
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OHTSUKA Nobuo
Japan Advanced Institute of Science and Technology
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Paul Narayan
Graduate School Of Natural Science And Technology Kanazawa University
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Takemoto Akira
Graduate School Of Natural Science And Technology Kanazawa University
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Takamiya Saburo
Graduate School Of Natural Science And Technology Division Of Electrical Engineering And Computer Sc
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Iiyama Koichi
Graduate School Of Natural Science And Technology Division Of Electrical Engineering And Computer Sc
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Yonezawa Yasuto
Industrial Research Institute Of Ishikawa
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Nakamura Kazuki
Graduate School Of Advanced Integration Science Chiba University
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Paul Narayan
Graduate School of Natural Science and Technology, Kanazawa University, 2-40-20 Kodatsuno, Kanazawa, Ishikawa 920-8667, Japan
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Yonezawa Yasuto
Industrial Research Institute of Ishikawa, 1 Tomizu, Kanazawa, Ishikawa 920-0223, Japan
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Takebe Masahide
Graduate School of Natural Science and Technology, Kanazawa University, 2-40-20 Kodatsuno, Kanazawa, Ishikawa 920-8667, Japan
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Iiyama Koichi
Graduate School of Natural Science and Technology, Kanazawa University, 2-40-20 Kodatsuno, Kanazawa, Ishikawa 920-8667, Japan
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Nakamura Kazuki
Graduate School of Natural Science and Technology, Kanazawa University, 2-40-20 Kodatsuno, Kanazawa, Ishikawa 920-8667, Japan
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Takemoto Akira
Graduate School of Natural Science and Technology, Kanazawa University, 2-40-20 Kodatsuno, Kanazawa, Ishikawa 920-8667, Japan
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Higashimine Koichi
Japan Advanced Institute of Science and Technology, Hokuriku 1-1 Ashahidai, Tatsunokuchi, Ishikawa 923-1292, Japan
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Ohtsuka Nobuo
Japan Advanced Institute of Science and Technology, Hokuriku 1-1 Ashahidai, Tatsunokuchi, Ishikawa 923-1292, Japan
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