GaAs Metal Insulator Semiconductor Field Effect Transistor with Oxi-Nitrided Gate Film Formed by New Process Utilizing Al Layer as Resist Film for Selective Etching, Oxi-Nitridation and Lift-Off
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概要
- 論文の詳細を見る
We have reported that the oxi-nitridation of GaAs forms an insulator–semiconductor interface without deteriorating the crystallographic order of GaAs, and is applicable to the fabrication of compound semiconductor devices with metal–insulator–semiconductor (MIS) gates. A problem with oxi-nitridation is that nitrogen plasma ashes and thins the photoresist and hence restricts the possible nitrogen processing times even if a long nitridation is desirable for a better interface quality. To counteract this restriction, we developed a new processing technique utilizing an 0.3-μm-thick Al layer as a mask for selective etching, oxi-nitridation and lift-off. A high transconductance (185 mS/mm) and sharp pinch-off were obtained by a long (8 h) nitridation.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-04-15
著者
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TAKEBE Masahide
Graduate School of Natural Science and Technology, Kanazawa University
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Seto Hiroki
Graduate School Of Natural Science And Technology Kanazawa University
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Fujino Yuhki
Graduate School Of Natural Science And Technology Kanazawa University
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Paul Narayan
Graduate School Of Natural Science And Technology Kanazawa University
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Takamiya Saburo
Graduate School Of Natural Science And Technology Division Of Electrical Engineering And Computer Sc
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Iiyama Koichi
Graduate School Of Natural Science And Technology Division Of Electrical Engineering And Computer Sc
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Paul Narayan
Graduate School of Natural Science and Technology, Kanazawa University, Kakuma-machi, Kanazawa 920-1192, Japan
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Tametou Mitoko
Graduate School of Natural Science and Technology, Kanazawa University, Kakuma-machi, Kanazawa 920-1192, Japan
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Seto Hiroki
Graduate School of Natural Science and Technology, Kanazawa University, Kakuma-machi, Kanazawa 920-1192, Japan
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Takebe Masahide
Graduate School of Natural Science and Technology, Kanazawa University, Kakuma-machi, Kanazawa 920-1192, Japan
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Iiyama Koichi
Graduate School of Natural Science and Technology, Kanazawa University, Kakuma-machi, Kanazawa 920-1192, Japan
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Takamiya Saburo
Graduate School of Natural Science and Technology, Kanazawa University, Kakuma-machi, Kanazawa 920-1192, Japan
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Fujino Yuhki
Graduate School of Natural Science and Technology, Kanazawa University, Kakuma-machi, Kanazawa 920-1192, Japan
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- Structural and Electrical Characterization of Oxidated, Nitridated and Oxi-nitridated (100) GaAs Surfaces
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