Mechanical Stress Caused by Adsorption of O or N on Ga-terminated (100) GaAs Surface and InAl-terminated (100) InAlAs Surface: Degradation of Insulator/Semiconductor Interface

概要

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Mechanical stress at the surfaces of GaAs and InAlAs, caused by adsorption of O or N on their group III surfaces, was calculated using small cluster models and first-principles calculations. These elements adsorb at the bridge sites and give strong compressive stress to the crystal. Assuming that only the O and N at the interface generate the stress, i.e., the insulator does not give any stress, mechanical stress at the insulator/semiconductor interface were calculated. N at the insulator/GaAs interface does not give a strong stress, but O does. Calculation results were compared with various experimental results. The results do not contradict any of the examined experimental findings, and these findings are reasonably understandable when one takes the mechanical stress as a cause of the interface degradation.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2005-05-15