Formation of Step-Free Surfaces on Diamond (111) Mesas by Homoepitaxial Lateral Growth
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概要
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We present a technique for the array formation of atomically step-free diamond surfaces on diamond (111) substrates by microwave plasma-enhanced chemical vapor deposition. With an appropriate choice of plasma conditions, the atomic steps initially present on each mesa surface move by lateral growth, and then, atomically step-free surfaces are successfully formed on diamond (111) mesas by microwave plasma-enhanced chemical vapor deposition. The lateral growth of diamond (111) films results in the formation of step-free surfaces with device dimensions up to 100 μm square on diamond (111) mesas. A limiting factor in scaling up the size and yield of the step-free mesas is the density of screw dislocations in the diamond substrate.
- 2012-09-25
著者
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Inokuma Takao
Graduate School Of Natural Science And Technology Kanazawa University
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Tokuda Norio
Graduate School of Natural Science and Technology, Kanazawa University, Kanazawa 920-1192, Japan
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Makino Toshiharu
Energy Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Makino Toshiharu
Energy Technology Research Institute (ETRI), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Yamasaki Satoshi
Energy Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Yamasaki Satoshi
Energy Technology Research Institute (ETRI), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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