Effect of Oxidation using Ultraviolet Light and Ozone and Subsequent Nitridation using Electron Cyclotron Resonance Plasma on Gate Portion of GaAs Field-Effect Transistors
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概要
- 論文の詳細を見る
- 2006-06-15
著者
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Hisaka Takayuki
High Frequency & Optical Device Works, Mitsubishi Electric Corporation
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Iiyama K
Graduate School Of Natural Science And Technology Kanazawa University
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SETO Hiroki
Graduate School of Natural Science and Technology, Kanazawa University
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IIYAMA Koichi
Graduate School of Natural Science and Technology, Kanazawa University
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TAKAMIYA Saburo
Graduate School of Natural Science and Technology, Kanazawa University
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Seto Hiroki
Graduate School Of Natural Science And Technology Kanazawa University
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FUJINO Yuhki
Graduate School of Natural Science and Technology, Kanazawa University
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TOTSUKA Masahiro
High Frequency and Optoelectronic Devices Works, Mitsubishi Electric Co., Ltd.
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AIHARA Yasuki
High Frequency and Optoelectronic Devices Works, Mitsubishi Electric Co., Ltd.
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Fujino Yuhki
Graduate School Of Natural Science And Technology Kanazawa University
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Aihara Yasuki
High Frequency And Optoelectronic Devices Works Mitsubishi Electric Co. Ltd.
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Totsuka Masahiro
High Frequency And Optoelectronic Devices Works Mitsubishi Electric Co. Ltd.
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Takamiya S
Graduate School Of Natural Science And Technology Kanazawa University
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- Effect of Oxidation using Ultraviolet Light and Ozone and Subsequent Nitridation using Electron Cyclotron Resonance Plasma on Gate Portion of GaAs Field-Effect Transistors
- Studies of Effects of Adsorption of Silicon or Germanium on the Electronic States of (100) GaAs Surfaces
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