Effect of Oxidation using Ultraviolet Light and Ozone and Subsequent Nitridation using Electron Cyclotron Resonance Plasma on Gate Portion of GaAS Field-Effect Transistors
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
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Iiyama K
Graduate School Of Natural Science And Technology Kanazawa University
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Seto Hiroki
Graduate School Of Natural Science And Technology Kanazawa University
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Fujino Yuhki
Graduate School Of Natural Science And Technology Kanazawa University
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- Studies of Effects of Adsorption of Silicon or Germanium on the Electronic States of (100) GaAs Surfaces
- Mechanical Stress Caused by Adsorption of O or N on Ga-terminated (100) GaAs Surface and InAl-terminated (100) InAlAs Surface: Degradation of Insulator/Semiconductor Interface