Takamiya S | Graduate School Of Natural Science And Technology Kanazawa University

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概要

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著作論文

Mechanical Stress Caused by Adsorption of O or N on Ga-terminated (100) GaAs Surface and InAl-terminated (100) InAlAs Surface : Degradation of Insulator/Semiconductor Interface
Studies of Effects of Adsorption of Silicon or Germanium on the Electronic States of (100) GaAs Surfaces
Oxygen and Sulfur Adsorption Effects on Electronic States of GaAs(100) Surfaces Studied with Discrete Variational Xα Method
Structural and Electrical Characterization of Oxidated, Nitridated and Oxi-nitridated (100) GaAs Surfaces
Two Levels of Ni/n-GaAs Schottky Barrier Heights Formed on a Wafer by Controlling pH of Pretreatment Chemicals : Effect of Oxygen Adsorption
Effect of Oxidation using Ultraviolet Light and Ozone and Subsequent Nitridation using Electron Cyclotron Resonance Plasma on Gate Portion of GaAs Field-Effect Transistors
Oxidation of InAlAs and Its Application to Gate Insulator of InAlAs/InGaAs Metal Oxide Semiconductor High Electron Mobility Transistor
Equivalent Circuit Model of InAlAs/InGaAs/InP Heterostructure Metal-Semiconductor-Metal Photodetectors(Lasers, Quantum Electronics)
Application of Brightness of Scanning Electron Microscope Images to Measuring Thickness of Nanometer-Thin SiO_2 Layers on Si Substrates : Semiconductors
I-V Characteristics of Schottky/Metal-Insulator-Semiconductor Diodes with Tunnel Thin Barriers
Phase-Decorrelated FMCW Reflectometry for Long Optical Fiber Characterization by Using a Laser Diode with Modulated External-Cavity (Special Issue on Optical Fiber Sensors)

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