Structural and Optical Properties of Nanocrystalline Silicon Films Deposited by Plasma-Enhanced Chemical Vapor Deposition(Optical Properties of Condensed Matter)

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2002-01-15

著者

• Inokuma T

  Department Of Electronics Faculty Of Technology Kanazawa University

• Inokuma Takao

  Department Of Electronics Kanazawa University

• ALI Atif

  Division of Applied Science, Graduate School of Natural Science and Technology, Kanazawa University

• INOKUMA Takao

  Division of Applied Science, Graduate School of Natural Science and Technology, Kanazawa University

• KURATA Yoshihiro

  Division of Applied Science, Graduate School of Natural Science and Technology, Kanazawa University

• HASEGAWA Seiichi

  Division of Applied Science, Graduate School of Natural Science and Technology, Kanazawa University

• Ali Atif

  Division Of Applied Science Graduate School Of Natural Science And Technology Kanazawa University

• Kurata Y

  Precision Technology Development Center Sharp Corporation

関連論文

• Mechanical Stress Caused by Adsorption of O or N on Ga-terminated (100) GaAs Surface and InAl-terminated (100) InAlAs Surface : Degradation of Insulator/Semiconductor Interface
• Studies of Effects of Adsorption of Silicon or Germanium on the Electronic States of (100) GaAs Surfaces
• Oxygen and Sulfur Adsorption Effects on Electronic States of GaAs(100) Surfaces Studied with Discrete Variational Xα Method
• Structural and Electrical Characterization of Oxidated, Nitridated and Oxi-nitridated (100) GaAs Surfaces
• Properties of "Stoichiometric" Silicon Oxynitride Films
• Structural Properties of Ultrathin Amorphous Silicon Oxynitride Layers
• Effects of Plasma-Pretreatment on Substrates before Deposition of Polycrystalline Silicon Films(Surfaces, Interfaces, and Films)
• Structural and Optical Properties of Nanocrystalline Silicon Films Deposited by Plasma-Enhanced Chemical Vapor Deposition(Optical Properties of Condensed Matter)
• Influence of Organic Contamination on Silicon Dioxide Integrity
• Effects of Addition of SiF_4 During Growth of Nanocrystalline Silicon Films Deposited at 100℃ by Plasma-Enhanced Chemical Vapor Deposition
• Temperature Effects on the Structure of Polycrystalline Silicon Films by Glow-Discharge Decomposition Using SiH_4/SiF_4
• Effects of Nitrogen Addition to Fluorinated Silicon Dioxide Films
• Initial Growth of Polycrystalline Silicon Films on Substrates Subjected to Different Plasma Treatments
• Effects of the Addition of SiF_4 to the SiH_4 Feed Gas for Depositing Polycrystalline Silicon Films at Low Temperature
• Stress in Amorphous SiO_x:H Films Prepared by Plasma-Enhanced Chemical Vapor Deposition
• Properties of "Stoichiometric" Silicon Oxynitride Films
• Effects of Deposition Temperature on Strain in Polycrystalline SiC Films Deposited by Radio-Frequency Glow Discharge
• Pressure Effects on CdS Microcrystals Embedded in Germanate Glasses
• Raman Scattering of Amorphous Semiconductors Ge-S System under High Hydrostatic Pressure
• Optical Pickup Employing a Hologram-Laser-Photodiode Unit
• Integrated Optical Unit for Magneto-Optical Pickups
• Spherical Aberration Error Detection for Blu-ray Disc Optical Pickups
• Axially Controlled Solid-Phase Crystallization of Amorphous Silicon
• Structural and Electrical Properties of P- and B-Doped Polycrystalline Silicon by Plasma-Enhanced CVD at 700℃
• Boron Doping to Microeryslalline SiN_H Films
• Incorporation Effects of Nitrogen into Phosphorus Doped Microcrystalline Si:H Films

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