Axially Controlled Solid-Phase Crystallization of Amorphous Silicon

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概要

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• The crystallization behavior of a-Si films has been investigated as a function of the annealing temperature T_a (530-1100℃) and time (0-72 h) by means of X-ray diffraction, transmission electron microscopy (TEM) and Raman scattering. The a-Si films were deposited by low-pressure chemical vapor deposition (LPCVD) onto poly-Si films with a strong <110> texture prepared by plasma-enhanced CVD (PECVD) [poly-Si(P)], and onto fused quartz substrates [poly-Si(Q)]. Poly-Si(P) films were crystallized maintaining the same strong <110> texture as the PECVD poly-Si substrate, over the entire T_a range. However, poly-Si(Q) films exhibited a weak <111> texture. The final grain size estimated by TEM for poly-Si(P) films was independent of T_a, but became 7-8 times larger than that for the poly-Si substrate. The crystallization mechanism of poly-Si(P) films was discussed in comparison with that of poly-Si(Q) films.

• 社団法人応用物理学会の論文
• 1992-02-15

著者

• HASEGAWA Seiichi

  Department of Electronics, Faculty of Technology, Kanazawa University

• KURATA Yoshihiro

  Department of Electronics, Faculty of Technology, Kanazawa University

• Kurata Y

  Precision Technology Development Center Sharp Corporation

• NAKAMURA Takuya

  Department of Electronics, Faculty of Technology, Kanazawa University

• Hasegawa Seiichi

  Department Of Electronics Faculty Of Technology Kanazawa University

• Kurata Yoshihiro

  Department Of Electronics Faculty Of Technology Kanazawa University

• Nakamura Takuya

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Toyama University

• Nakamura Takuya

  Department Of Electronics Faculty Of Technology Kanazawa University

• Hasegawa Seiichi

  Department Of Electrical And Computer Engineering Faculty Of Technology Kanazawa University

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