Incorporation Effects of Nitrogen into Phosphorus Doped Microcrystalline Si:H Films

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概要

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• Microcrystalline Si_<1-x>N_x:H films were prepared by r.f. glow-discharge of SiH_4-PH_3-N_2-H_2 mixtures with the gas volume ratio of N_2 to SiH_4 maintained at 0.06. Incorporation effects of nitrogen on the electrical and optical properties, in connection with the degree of crystallization, have been investigated as a function of the substrate temperature T_s and r.f. power. The crystallization is observed at T_s between 250 and 400℃, but not at other T_s This is in good correspondence to the increase in dark conductivity. The degree of crystallization and optical gap increase with r.f. power. A model for the crystallization process is proposed.

• 社団法人応用物理学会の論文
• 1986-02-20

著者

• KURATA Yoshihiro

  Department of Electronics, Faculty of Technology, Kanazawa University

• Kurata Y

  Precision Technology Development Center Sharp Corporation

• Hasegawa Seiichi

  Department Of Electronics Faculty Of Technology Kanazawa University

• TSUKAO Toshiya

  Department of Electronics, Faculty of Technology, Kanazawa University

• Kurata Yoshihiro

  Department Of Electronics Faculty Of Technology Kanazawa University

• Tsukao Toshiya

  Department Of Electronics Faculty Of Technology Kanazawa University

• Hasegawa Seiichi

  Department Of Electrical And Computer Engineering Faculty Of Technology Kanazawa University

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