Boron Doping to Microeryslalline SiN_H Films
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概要
- 論文の詳細を見る
Microcrystalline SiN_x:H films were prepared by r.f. glow-discharge of SiH_4-B_2H_6-N_2-H_2 mixtures with the gas volume ratio of N_2/SiH_4=0.03. The volume fraction of the crystalline phase and the crystallite size decrease with an increase in B-doping ratio, R_V. With increasing R_B, the dark conductivity σ_d increases up to a value larger than 10^<-3>Ω^<-1>cm^<-1> (the activation energy E_a is 0.1 cV and the optical gap E_g is 1.9eV) at R_B=5×10^<-3> through the minimum σ_d smaller than 10^<-12> Ω^<-1>cm^<-1> (E_a=1.1 eV, E_g=1.75 eV) at R_B around 10^<-4> to 10^<-3>. The slope K in Tauc's relation increase with R_B.
- 社団法人応用物理学会の論文
- 1986-11-20
著者
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KURATA Yoshihiro
Department of Electronics, Faculty of Technology, Kanazawa University
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Kurata Y
Precision Technology Development Center Sharp Corporation
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Hasegawa Seiichi
Department Of Electronics Faculty Of Technology Kanazawa University
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SEGAWA Mizuki
Department of Electronics, Faculty of Technology, Kanazawa University
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Kurata Yoshihiro
Department Of Electronics Faculty Of Technology Kanazawa University
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Segawa Mizuki
Department Of Electronics Faculty Of Technology Kanazawa University
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Hasegawa Seiichi
Department Of Electrical And Computer Engineering Faculty Of Technology Kanazawa University
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