Properties of "Stoichiometric" Silicon Oxynitride Films
スポンサーリンク
概要
- 論文の詳細を見る
- 1995-08-21
著者
-
Inokuma Takao
Department Of Electronics Kanazawa University
-
Inokuma Takao
Department Of Electronics Faculty Of Technology Kanazawa University
-
HE LeNian
Department of Electronics, Faculty of Technology, Kanazawa University
-
HASEGAWA Seiichi
Department of Electronics, Faculty of Technology, Kanazawa University
-
He Lenian
Department Of Electronics Faculty Of Technology Kanazawa University
-
Hasegawa Seiichi
Department Of Electronics Faculty Of Technology Kanazawa University
-
Hasegawa Seiichi
Department Of Electrical And Computer Engineering Faculty Of Technology Kanazawa University
関連論文
- Mechanical Stress Caused by Adsorption of O or N on Ga-terminated (100) GaAs Surface and InAl-terminated (100) InAlAs Surface : Degradation of Insulator/Semiconductor Interface
- Studies of Effects of Adsorption of Silicon or Germanium on the Electronic States of (100) GaAs Surfaces
- Oxygen and Sulfur Adsorption Effects on Electronic States of GaAs(100) Surfaces Studied with Discrete Variational Xα Method
- Structural and Electrical Characterization of Oxidated, Nitridated and Oxi-nitridated (100) GaAs Surfaces
- Properties of "Stoichiometric" Silicon Oxynitride Films
- Structural Properties of Ultrathin Amorphous Silicon Oxynitride Layers
- Effects of Plasma-Pretreatment on Substrates before Deposition of Polycrystalline Silicon Films(Surfaces, Interfaces, and Films)
- Structural and Optical Properties of Nanocrystalline Silicon Films Deposited by Plasma-Enhanced Chemical Vapor Deposition(Optical Properties of Condensed Matter)
- Influence of Organic Contamination on Silicon Dioxide Integrity
- Effects of Addition of SiF_4 During Growth of Nanocrystalline Silicon Films Deposited at 100℃ by Plasma-Enhanced Chemical Vapor Deposition
- Temperature Effects on the Structure of Polycrystalline Silicon Films by Glow-Discharge Decomposition Using SiH_4/SiF_4
- Effects of Nitrogen Addition to Fluorinated Silicon Dioxide Films
- Initial Growth of Polycrystalline Silicon Films on Substrates Subjected to Different Plasma Treatments
- Effects of the Addition of SiF_4 to the SiH_4 Feed Gas for Depositing Polycrystalline Silicon Films at Low Temperature
- Stress in Amorphous SiO_x:H Films Prepared by Plasma-Enhanced Chemical Vapor Deposition
- Properties of "Stoichiometric" Silicon Oxynitride Films
- Effects of Deposition Temperature on Strain in Polycrystalline SiC Films Deposited by Radio-Frequency Glow Discharge
- Pressure Effects on CdS Microcrystals Embedded in Germanate Glasses
- Raman Scattering of Amorphous Semiconductors Ge-S System under High Hydrostatic Pressure
- INVESTIGATION OF CLINICAL CHARACTERISTICS OF VENTRICULAR EXTRASYSTOLE IN CHILDREN : Using Two Dimensional RR Interval Plotting Method
- Evaluation of Optical Absorption Coefficients of a-SiN:H Films by Photothermal Deflection Spectroscopy(PDS) : Photoacoustic Spectroscopy
- AC Discharge Characteristics of a Needle-to-Semicircular-Electrode Gap with Solid Dielectric Surface under High Humidity : Nuclear Science, Plasmas and Electric Discharges
- Flashover Characteristics of Impulse Voltages on Solid Dielectric Surfaces under High Humidity
- Axially Controlled Solid-Phase Crystallization of Amorphous Silicon
- Structural and Electrical Properties of P- and B-Doped Polycrystalline Silicon by Plasma-Enhanced CVD at 700℃
- Boron Doping to Microeryslalline SiN_H Films
- Incorporation Effects of Nitrogen into Phosphorus Doped Microcrystalline Si:H Films
- A Case of Advanced Breast Cancer Successfully Treated with Primary Endocrine Therapy
- Electron Spin Resonance of Conduction Electrons in Phosphorus Ion-Implanted Silicon
- ESR Studies on P^+ Ion-Implanted Si
- Plasma-Hydrogenation Effects in Doped CVD Amorphous Silicon Films
- Current Transport in Doped Polycrystalline Silicon
- Photoluminescence of Hydrogenated Amorphous Carbon Films
- ESR Studies on Pyrolyzed and Irradiated Polyacrylonitrile
- The Lattice Location of Phosphorus Atoms Implanted into Silicon
- Electron Spin Resonance Studies on Ion-Implanted Silicon. : I. Amorphisation
- Isothermal Annealing in P+ Ion-Implanted Silicon
- Electron Spin Resonance Studies on Ion-Implanted Silicon. : II. Conduction Electrons
- Structural Properties of Ultrathin Amorphous Silicon Oxynitride Layers
- Properties of "Stoichiometric" Silicon Oxynitride Films