Effects of Addition of SiF_4 During Growth of Nanocrystalline Silicon Films Deposited at 100℃ by Plasma-Enhanced Chemical Vapor Deposition

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1999-10-15

著者

• Inokuma T

  Department Of Electronics Faculty Of Technology Kanazawa University

• Inokuma Takao

  Department Of Electronics Kanazawa University

• Inokuma Takao

  Department Of Electronics Faculty Of Technology Kanazawa University

• HASEGAWA Seiichi

  Department of Electronics, Faculty of Technology, Kanazawa University

• KURATA Yoshihiro

  Department of Electronics, Faculty of Technology, Kanazawa University

• ALI Atif

  Division of Applied Science, Graduate School of Natural Science and Technology, Kanazawa University

• Ali Atif

  Department of Electronics, Faculty of Technology, Kanazawa University

• Inokura Takao

  Department of Electronics, Faculty of Technology, Kanazawa University

• Ali Atif

  Division Of Applied Science Graduate School Of Natural Science And Technology Kanazawa University

• Kurata Y

  Precision Technology Development Center Sharp Corporation

• Hasegawa Seiichi

  Department Of Electronics Faculty Of Technology Kanazawa University

• Kurata Yoshihiro

  Department Of Electronics Faculty Of Technology Kanazawa University

• Hasegawa Seiichi

  Department Of Electrical And Computer Engineering Faculty Of Technology Kanazawa University

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