Tungsten Through-Silicon Via Technology for Three-Dimensional LSIs

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概要

• 論文の詳細を見る

• Tungsten through-silicon via (W-TSV) technology is investigated for the fabrication of three-dimensional (3D) LSI chips having low-resistive TSVs with a width less than 3 μm. In our 3D integration technology, completed two-dimensional (2D) LSI chips including metal–oxide–semiconductor field-effect transistors (MOSFETs) and metal wirings are vertically stacked through a number of short vertical interconnections called TSV with lengths ranging from several microns to several tens of microns. The W-TSV technology is mainly divided into three low-temperature processes: deep-trench etching, dielectric layer formation, and filling with a conductive material. We successfully formed deep Si trenches through a 6-μm-thick SiO2 dielectric layer by the modified Bosch process. The depth of the resulting Si trenches with a dielectric layer is approximately 40 μm. A SiO2 layer was formed at the bottom and on the sidewall of the Si trenches by sub-atmospheric chemical vapor deposition (SACVD) method using tetraethylorthosilicate (TEOS) and O3. In addition, we succeeded in uniformly depositing a conformal W metal layer by time-modulated W-CVD method at 300 °C.

• 2008-04-25

著者

• Yamada Yusuke

  Department Of Chemical Engineering Faculty Of Engineering Kyushu University

• Ali Atif

  Department of Electronics, Faculty of Technology, Kanazawa University

• Fukushima Takafumi

  Department Of Advanced Materials Chemistry Graduate School Of Engineering Yokohama National Universi

• Tanaka Tetsu

  Department Of Quantum Materials Science University Of Tokushima

• KIKUCHI Hirokazu

  Department of Bioengineering and Robotics, Graduate School of Engineering, Tohoku University

• Koyanagi Mitsumasa

  Department Of Bioengineering And Robotics Graduate School Of Engineering Tohoku University

• Liang Jun

  Department of Bioengineering and Robotics, Graduate School of Engineering, Tohoku University, 6-6-01 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan

• Fukushima Takafumi

  Department of Bioengineering and Robotics, Graduate School of Engineering, Tohoku University, 6-6-01 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan

• Yamada Yusuke

  Department of Bioengineering and Robotics, Graduate School of Engineering, Tohoku University, 6-6-01 Aza Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan

• Yamada Yusuke

  Department of Bioengineering and Robotics, Graduate School of Engineering, Tohoku University, 6-6-01 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan

• Tanaka Tetsu

  Department of Bioengineering and Robotics, Graduate School of Engineering, Tohoku University, 6-6-01 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan

• Kikuchi Hirokazu

  Department of Bioengineering and Robotics, Graduate School of Engineering, Tohoku University, 6-6-01 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan

• Ali Atif

  Department of Physics, Faculty of Science, Assiut University, Assiut 71516, Egypt

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